Preparation and properties of ferromagnetic antiperovskite Co3FeN thin films

Hideki Sakakibara; Hiroki Ando; Tetsuya Miyawaki; Kenji Ueda; Hidefumi Asano

doi:10.1109/TMAG.2014.2326897

Preparation and properties of ferromagnetic antiperovskite Co₃FeN thin films

Hideki Sakakibara^*, Hiroki Ando, Tetsuya Miyawaki, Kenji Ueda, Hidefumi Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Thin films of Co₃FeN with an antiperovskite structure were epitaxially grown on (La_0.18Sr_0.82)(Al_0.59Ta_0.41)O₃ (001) substrates by reactive magnetron sputtering. The influence of the N₂ volume concentration in the sputtering gas mixture on the structure and properties of Co₃FeN thin films was systematically investigated. The optimized Co₃FeN thin films exhibited a saturation magnetization, M_s, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.

Original language	English
Article number	6971351
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2014.2326897
Publication status	Published - 2014 Nov 1
Externally published	Yes

Keywords

Anisotropic magnetoresistance (AMR)
antiperovskite
CoFeN
half-metal
thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2014.2326897

Cite this

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title = "Preparation and properties of ferromagnetic antiperovskite Co3FeN thin films",

abstract = "Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.",

keywords = "Anisotropic magnetoresistance (AMR), antiperovskite, CoFeN, half-metal, thin film",

author = "Hideki Sakakibara and Hiroki Ando and Tetsuya Miyawaki and Kenji Ueda and Hidefumi Asano",

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AU - Sakakibara, Hideki

AU - Ando, Hiroki

AU - Miyawaki, Tetsuya

AU - Ueda, Kenji

AU - Asano, Hidefumi

PY - 2014/11/1

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AB - Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.

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