Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.
|Journal||IEEE Transactions on Magnetics|
|Publication status||Published - 2014 Nov 1|
- Anisotropic magnetoresistance (AMR)
- thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering