Preparation and properties of ferromagnetic antiperovskite Co3FeN thin films

Hideki Sakakibara*, Hiroki Ando, Tetsuya Miyawaki, Kenji Ueda, Hidefumi Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.

Original languageEnglish
Article number6971351
JournalIEEE Transactions on Magnetics
Issue number11
Publication statusPublished - 2014 Nov 1
Externally publishedYes


  • Anisotropic magnetoresistance (AMR)
  • antiperovskite
  • CoFeN
  • half-metal
  • thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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