Preparation and properties of inverse perovskite Mn3GaN thin films and heterostructures

H. Tashiro; R. Suzuki; T. Miyawaki; K. Ueda; H. Asano

doi:10.3938/jkps.63.299

Preparation and properties of inverse perovskite Mn₃GaN thin films and heterostructures

H. Tashiro, R. Suzuki, T. Miyawaki, K. Ueda, H. Asano^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Thin films and heterostructures of Mn₃GaN with an inverse perovskite structure were grown epitaxially on SrTiO₃ (001) and (La_0.18Sr_0.82)(Al_0.59Ta_0.41)O₃ (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn₃GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba_0.7Sr_0.3TiO₃ and Mn₃GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.

Original language	English
Pages (from-to)	299-301
Number of pages	3
Journal	Journal of the Korean Physical Society
Volume	63
Issue number	3
DOIs	https://doi.org/10.3938/jkps.63.299
Publication status	Published - 2013 Aug
Externally published	Yes

Keywords

Inverse perovskite structure
Magnetocapacitance
MnGaN

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.3938/jkps.63.299

Cite this

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title = "Preparation and properties of inverse perovskite Mn3GaN thin films and heterostructures",

abstract = "Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grown epitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn3GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.",

keywords = "Inverse perovskite structure, Magnetocapacitance, MnGaN",

author = "H. Tashiro and R. Suzuki and T. Miyawaki and K. Ueda and H. Asano",

note = "Funding Information: This work was partly supported by Grants-in-Aid for Science Research (Nos. 20360005, 23656214, 24560372) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2013",

month = aug,

doi = "10.3938/jkps.63.299",

language = "English",

volume = "63",

pages = "299--301",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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TY - JOUR

T1 - Preparation and properties of inverse perovskite Mn3GaN thin films and heterostructures

AU - Tashiro, H.

AU - Suzuki, R.

AU - Miyawaki, T.

AU - Ueda, K.

AU - Asano, H.

N1 - Funding Information: This work was partly supported by Grants-in-Aid for Science Research (Nos. 20360005, 23656214, 24560372) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2013/8

Y1 - 2013/8

N2 - Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grown epitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn3GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.

AB - Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grown epitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn3GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.

KW - Inverse perovskite structure

KW - Magnetocapacitance

KW - MnGaN

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