Preparation of AgGaTe2 Layers on Mo/glass Substrate by Two-step Closed Sublimation and its Application to Solar Cells

Aya Uruno

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    High quality AgGaTe2 layers were prepared by the two-step closed space sublimation (CSS) method. The (112) oriented AgGaTe2 layers on Mo/glass substrates were obtained. Solar cell structures were fabricated using these layers. Under the solar simulator illumination (AM 1.5), the photovoltaic characteristic was observed. The photo-absorption edge at around 960 nm was associated with the band edge of AgGaTe2. It was revealed that AgGaTe2 layers could be employed as the novel solar cell material, although those data related to the solar cell performance were very low and further improvements were demanded.

    Original languageEnglish
    Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages865-869
    Number of pages5
    ISBN (Electronic)9781538685297
    DOIs
    Publication statusPublished - 2018 Nov 26
    Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
    Duration: 2018 Jun 102018 Jun 15

    Other

    Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
    CountryUnited States
    CityWaikoloa Village
    Period18/6/1018/6/15

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Renewable Energy, Sustainability and the Environment
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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  • Cite this

    Uruno, A. (2018). Preparation of AgGaTe2 Layers on Mo/glass Substrate by Two-step Closed Sublimation and its Application to Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 865-869). [8547469] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547469