Preparation of light-emitting organic field-effect transistors with asymmetric electrodes

Tomo Sakanoue, Ryo Yamada, Hirokazu Tada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Light-emitting organic field-effect transistors (LEOFETs) based on Poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV), α-sexithiophene (α-6T) and N,N′-Ditridecylperylene-3,4,9,10- tetracarboxylic diimide (PTCDI-C13) were prepared on a SiO 2 gate insulator. The LEOFETs based on MEH-PPV and α-6T showed a p-type semiconducting behavior whereas PTCDI-C13 operated in n-type FET. Asymmetric electrodes of Au-Al were prepared by twice of photolithography and lift-off techniques, and by electroplating of Au onto Al electrode to improved device performances. The emission efficiency of the devices with Au/Cr-Al was approximately 20 times higher than that of the device with Au/Al-Au/Al electrodes at the gate and drain voltages of -100 V. The emission region was observed with an optical microscope. The emission region was found to be very homogeneous along the drain electrode, and it did not shift when the gate and drain voltages changed. Although the carrier injection was improved by using asymmetric electrodes, the number of the carriers injected from the drain electrode was still lower than that from the source electrode in the unipolar devices.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsZ. Bao, D.J. Gundlach
Pages1-8
Number of pages8
Volume5940
DOIs
Publication statusPublished - 2005
Externally publishedYes
EventOrganic Field-Effect Transistors IV - San Diego, CA, United States
Duration: 2005 Jul 312005 Aug 2

Other

OtherOrganic Field-Effect Transistors IV
CountryUnited States
CitySan Diego, CA
Period05/7/3105/8/2

Fingerprint

Organic field effect transistors
field effect transistors
preparation
Electrodes
electrodes
carrier injection
electroplating
Electric potential
electric potential
Electroplating
Photolithography
photolithography
Field effect transistors
optical microscopes
Microscopes
insulators
shift

Keywords

  • Conjugated polymer
  • Field-effect transistor
  • Light-emitting transistor
  • Organic semiconductor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sakanoue, T., Yamada, R., & Tada, H. (2005). Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. In Z. Bao, & D. J. Gundlach (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5940, pp. 1-8). [59400Y] https://doi.org/10.1117/12.618020

Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. / Sakanoue, Tomo; Yamada, Ryo; Tada, Hirokazu.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Z. Bao; D.J. Gundlach. Vol. 5940 2005. p. 1-8 59400Y.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakanoue, T, Yamada, R & Tada, H 2005, Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. in Z Bao & DJ Gundlach (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5940, 59400Y, pp. 1-8, Organic Field-Effect Transistors IV, San Diego, CA, United States, 05/7/31. https://doi.org/10.1117/12.618020
Sakanoue T, Yamada R, Tada H. Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. In Bao Z, Gundlach DJ, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5940. 2005. p. 1-8. 59400Y https://doi.org/10.1117/12.618020
Sakanoue, Tomo ; Yamada, Ryo ; Tada, Hirokazu. / Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. Proceedings of SPIE - The International Society for Optical Engineering. editor / Z. Bao ; D.J. Gundlach. Vol. 5940 2005. pp. 1-8
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