Preparation of organic light-emitting field-effect transistors with asymmetric electrodes

Tomo Sakanoue, Eiichi Fujiwara, Ryo Yamada, Hirokazu Tada

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Light-emitting field-effect transistors (LEFET) based on poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV) were prepared with asymmetric electrodes of a Au/Cr source and an Al drain on a SiO 2 gate insulator (600 nm) through twice of photolithography and lift-off techniques. The light emission was observed when the gate voltages increased above -40 V at the drain voltage of -100 V. The luminous efficiency of the devices was significantly improved comparing to those with conventional electrodes of Au/Cr.

Original languageEnglish
Pages (from-to)494-495
Number of pages2
JournalChemistry Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 2005 Apr 5
Externally publishedYes

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Field effect transistors
Electrodes
Light emission
Electric potential
Photolithography
poly(2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene)

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Preparation of organic light-emitting field-effect transistors with asymmetric electrodes. / Sakanoue, Tomo; Fujiwara, Eiichi; Yamada, Ryo; Tada, Hirokazu.

In: Chemistry Letters, Vol. 34, No. 4, 05.04.2005, p. 494-495.

Research output: Contribution to journalArticle

Sakanoue, Tomo ; Fujiwara, Eiichi ; Yamada, Ryo ; Tada, Hirokazu. / Preparation of organic light-emitting field-effect transistors with asymmetric electrodes. In: Chemistry Letters. 2005 ; Vol. 34, No. 4. pp. 494-495.
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