Preparation of organic light-emitting field-effect transistors with asymmetric electrodes

Tomo Sakanoue, Eiichi Fujiwara, Ryo Yamada, Hirokazu Tada

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30 Citations (Scopus)

Abstract

Light-emitting field-effect transistors (LEFET) based on poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV) were prepared with asymmetric electrodes of a Au/Cr source and an Al drain on a SiO 2 gate insulator (600 nm) through twice of photolithography and lift-off techniques. The light emission was observed when the gate voltages increased above -40 V at the drain voltage of -100 V. The luminous efficiency of the devices was significantly improved comparing to those with conventional electrodes of Au/Cr.

Original languageEnglish
Pages (from-to)494-495
Number of pages2
JournalChemistry Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 2005 Apr 5
Externally publishedYes

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ASJC Scopus subject areas

  • Chemistry(all)

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