Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

Masatoshi Mitsuya, Minoru Osada, Keisuke Saito, Hiroshi Funakubo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

Original languageEnglish
Pages (from-to)473-477
Number of pages5
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4 I
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

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Organic Chemicals
Organic chemicals
metalorganic chemical vapor deposition
Chemical vapor deposition
Solid solutions
solid solutions
Metals
preparation
Curie temperature
Chemical analysis
Lattice constants
lattice parameters
Permittivity
Polarization
permittivity
Thin films
Substrates
polarization
thin films

Keywords

  • A1. Solid solutions
  • A3. Chemical vapor deposition processes
  • B1. Inorganic compounds
  • B2. Ferroelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties. / Mitsuya, Masatoshi; Osada, Minoru; Saito, Keisuke; Funakubo, Hiroshi.

In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 I, 04.2002, p. 473-477.

Research output: Contribution to journalArticle

Mitsuya, Masatoshi ; Osada, Minoru ; Saito, Keisuke ; Funakubo, Hiroshi. / Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties. In: Journal of Crystal Growth. 2002 ; Vol. 237-239, No. 1-4 I. pp. 473-477.
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AU - Mitsuya, Masatoshi

AU - Osada, Minoru

AU - Saito, Keisuke

AU - Funakubo, Hiroshi

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N2 - Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

AB - Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

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