Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

Masatoshi Mitsuya, Minoru Osada, Keisuke Saito, Hiroshi Funakubo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

Original languageEnglish
Pages (from-to)473-477
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4 I
Publication statusPublished - 2002 Apr
Externally publishedYes


  • A1. Solid solutions
  • A3. Chemical vapor deposition processes
  • B1. Inorganic compounds
  • B2. Ferroelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics


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