Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

Takashi Nishimura, Takamichi Ichikawa, Nagahiro Saito, Akio Fuwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

    Original languageEnglish
    Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
    EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
    Pages267-270
    Number of pages4
    Publication statusPublished - 2000
    EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA
    Duration: 2000 Nov 52000 Nov 8

    Other

    OtherProceedings of the Second International Conference on Processing Materials for Properties
    CitySan Francisco, CA
    Period00/11/500/11/8

    Fingerprint

    Yttria stabilized zirconia
    Organic chemicals
    Vapors
    Electrolytes
    Plasmas
    Thin films
    Solid oxide fuel cells (SOFC)
    Metals
    Chemical vapor deposition
    Oxygen

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Nishimura, T., Ichikawa, T., Saito, N., & Fuwa, A. (2000). Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. In B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (Eds.), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 267-270)

    Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. / Nishimura, Takashi; Ichikawa, Takamichi; Saito, Nagahiro; Fuwa, Akio.

    Proceedings of the Second International Conference on Processing Materials for Properties. ed. / B. Mishra; C, Yamauchi; B. Mishra; C. Yamauchi. 2000. p. 267-270.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Nishimura, T, Ichikawa, T, Saito, N & Fuwa, A 2000, Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. in B Mishra, C Yamauchi, B Mishra & C Yamauchi (eds), Proceedings of the Second International Conference on Processing Materials for Properties. pp. 267-270, Proceedings of the Second International Conference on Processing Materials for Properties, San Francisco, CA, 00/11/5.
    Nishimura T, Ichikawa T, Saito N, Fuwa A. Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. In Mishra B, Yamauchi C, Mishra B, Yamauchi C, editors, Proceedings of the Second International Conference on Processing Materials for Properties. 2000. p. 267-270
    Nishimura, Takashi ; Ichikawa, Takamichi ; Saito, Nagahiro ; Fuwa, Akio. / Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. Proceedings of the Second International Conference on Processing Materials for Properties. editor / B. Mishra ; C, Yamauchi ; B. Mishra ; C. Yamauchi. 2000. pp. 267-270
    @inproceedings{2973e956fe9c4122812a8c4f2b0246bc,
    title = "Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition",
    abstract = "Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.",
    author = "Takashi Nishimura and Takamichi Ichikawa and Nagahiro Saito and Akio Fuwa",
    year = "2000",
    language = "English",
    isbn = "087339495X",
    pages = "267--270",
    editor = "B. Mishra and C, Yamauchi and B. Mishra and C. Yamauchi",
    booktitle = "Proceedings of the Second International Conference on Processing Materials for Properties",

    }

    TY - GEN

    T1 - Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

    AU - Nishimura, Takashi

    AU - Ichikawa, Takamichi

    AU - Saito, Nagahiro

    AU - Fuwa, Akio

    PY - 2000

    Y1 - 2000

    N2 - Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

    AB - Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

    UR - http://www.scopus.com/inward/record.url?scp=0034592396&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0034592396&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0034592396

    SN - 087339495X

    SP - 267

    EP - 270

    BT - Proceedings of the Second International Conference on Processing Materials for Properties

    A2 - Mishra, B.

    A2 - Yamauchi, C,

    A2 - Mishra, B.

    A2 - Yamauchi, C.

    ER -