Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

Takashi Nishimura, Takamichi Ichikawa, Nagahiro Saito, Akio Fuwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

    Original languageEnglish
    Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
    EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
    Pages267-270
    Number of pages4
    Publication statusPublished - 2000
    EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA
    Duration: 2000 Nov 52000 Nov 8

    Other

    OtherProceedings of the Second International Conference on Processing Materials for Properties
    CitySan Francisco, CA
    Period00/11/500/11/8

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Nishimura, T., Ichikawa, T., Saito, N., & Fuwa, A. (2000). Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. In B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (Eds.), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 267-270)