Pressure effect of superconducting transition temperature for boron-doped (111) diamond films

N. Oki, T. Kagayama, K. Shimizu, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Many studies on superconductivity of boron-doped diamond (BDD) have been done, and it is well known that the superconducting transition temperature Tc of BDD films depend on the boron concentration and the growth direction. Uniaxial like pressure along (111) direction was applied on boron-doped (111) diamond films synthesized by CVD method using a diamond-anvil cell (DAC) up to 18.5 GPa. The Tc was decreased as previous report, however the changing rate is smaller than other experiments with hydrostatic pressures and a theoretical prediction.

    Original languageEnglish
    Article number012143
    JournalJournal of Physics: Conference Series
    Volume215
    DOIs
    Publication statusPublished - 2010

    Fingerprint

    pressure effects
    diamond films
    boron
    transition temperature
    diamonds
    anvils
    hydrostatic pressure
    superconductivity
    vapor deposition
    predictions
    cells

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Pressure effect of superconducting transition temperature for boron-doped (111) diamond films. / Oki, N.; Kagayama, T.; Shimizu, K.; Kawarada, Hiroshi.

    In: Journal of Physics: Conference Series, Vol. 215, 012143, 2010.

    Research output: Contribution to journalArticle

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