Pressure effect of superconducting transition temperature for boron-doped (111) diamond films

N. Oki, T. Kagayama, K. Shimizu, H. Kawarada

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Many studies on superconductivity of boron-doped diamond (BDD) have been done, and it is well known that the superconducting transition temperature Tc of BDD films depend on the boron concentration and the growth direction. Uniaxial like pressure along (111) direction was applied on boron-doped (111) diamond films synthesized by CVD method using a diamond-anvil cell (DAC) up to 18.5 GPa. The Tc was decreased as previous report, however the changing rate is smaller than other experiments with hydrostatic pressures and a theoretical prediction.

Original languageEnglish
Article number012143
JournalJournal of Physics: Conference Series
Volume215
DOIs
Publication statusPublished - 2010 May 12

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this