Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka; S. Tsuda; T. Yamaguchi; H. Kawarada; Y. Takano

doi:10.1016/j.physc.2008.05.039

Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka, S. Tsuda, T. Yamaguchi, H. Kawarada, Y. Takano

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δT_c/δP = -1.17 × 10^-1 K/GPa and -1.51 × 10^-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

Original language	English
Pages (from-to)	1228-1230
Number of pages	3
Journal	Physica C: Superconductivity and its applications
Volume	468
Issue number	15-20
DOIs	https://doi.org/10.1016/j.physc.2008.05.039
Publication status	Published - 2008 Sep 15

Keywords

Boron
Diamond
Pressure
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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Tomioka, F., Tsuda, S., Yamaguchi, T., Kawarada, H., & Takano, Y. (2008). Pressure effect of superconducting transition temperature for boron-doped diamond films. Physica C: Superconductivity and its applications, 468(15-20), 1228-1230. https://doi.org/10.1016/j.physc.2008.05.039

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abstract = "The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.",

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AU - Tomioka, F.

AU - Tsuda, S.

AU - Yamaguchi, T.

AU - Kawarada, H.

AU - Takano, Y.

PY - 2008/9/15

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AB - The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

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