Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka, S. Tsuda, T. Yamaguchi, Hiroshi Kawarada, Y. Takano

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

    Original languageEnglish
    Pages (from-to)1228-1230
    Number of pages3
    JournalPhysica C: Superconductivity and its Applications
    Volume468
    Issue number15-20
    DOIs
    Publication statusPublished - 2008 Sep 15

    Fingerprint

    Boron
    Pressure effects
    Diamond films
    pressure effects
    diamond films
    Superconducting transition temperature
    boron
    transition temperature
    Thin films
    diamonds
    thin films
    Diamond
    Chemical vapor deposition
    Diamonds
    Microwaves
    vapor deposition
    Plasmas
    microwaves
    electrical resistivity
    expansion

    Keywords

    • Boron
    • Diamond
    • Pressure
    • Superconductivity

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Pressure effect of superconducting transition temperature for boron-doped diamond films. / Tomioka, F.; Tsuda, S.; Yamaguchi, T.; Kawarada, Hiroshi; Takano, Y.

    In: Physica C: Superconductivity and its Applications, Vol. 468, No. 15-20, 15.09.2008, p. 1228-1230.

    Research output: Contribution to journalArticle

    Tomioka, F. ; Tsuda, S. ; Yamaguchi, T. ; Kawarada, Hiroshi ; Takano, Y. / Pressure effect of superconducting transition temperature for boron-doped diamond films. In: Physica C: Superconductivity and its Applications. 2008 ; Vol. 468, No. 15-20. pp. 1228-1230.
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    AU - Takano, Y.

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