Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v

Shunsuke Yamada, Takaaki Sato, Hiroshi Toshiyoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa-1, which is at least 10 times greater than the conventional reports.

Original languageEnglish
Title of host publicationTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages766-769
Number of pages4
ISBN (Electronic)9781538627310
DOIs
Publication statusPublished - 2017 Jul 26
Externally publishedYes
Event19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, Taiwan, Province of China
Duration: 2017 Jun 182017 Jun 22

Publication series

NameTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
CountryTaiwan, Province of China
CityKaohsiung
Period17/6/1817/6/22

Fingerprint

Pressure sensors
pressure sensors
Field effect transistors
Capacitance
field effect transistors
Gels
capacitance
gels
sensitivity

Keywords

  • Ionic liquid
  • metal oxide semiconductor
  • tactile sensor and MOSFET

ASJC Scopus subject areas

  • Chemical Health and Safety
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Yamada, S., Sato, T., & Toshiyoshi, H. (2017). Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 766-769). [7994161] (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2017.7994161

Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v. / Yamada, Shunsuke; Sato, Takaaki; Toshiyoshi, Hiroshi.

TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 766-769 7994161 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamada, S, Sato, T & Toshiyoshi, H 2017, Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v. in TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems., 7994161, TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 766-769, 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, Kaohsiung, Taiwan, Province of China, 17/6/18. https://doi.org/10.1109/TRANSDUCERS.2017.7994161
Yamada S, Sato T, Toshiyoshi H. Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 766-769. 7994161. (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/TRANSDUCERS.2017.7994161
Yamada, Shunsuke ; Sato, Takaaki ; Toshiyoshi, Hiroshi. / Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v. TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 766-769 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).
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