Pressure tuning of strain in CdTe/InSb epilayer: a photoluminescence and photomodulated reflectivity study

Mark S. Boley, Robert J. Thomas, Meera Chandrasekhar, H. R. Chandrasekhar, A. K. Ramdas, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An investigation of the pressure tuning of the strain experienced by a pseudomorphic CdTe film on an InSb epilayer using (i) photomodulated reflectivity (PR), for observing the heavy-and light-hole excitonic signatures; (ii) photoluminescence (PL), for deducing the relative energies of the heavy-hole excitonic transition of 14 K was presented. The initial biaxial compression because of lattice mismatch rose in magnitude with the application of hydrostalic pressure in the epilayer, leading to a more significant splitting between the light-and heavy-hole bands. From these two analysis, accurate linear and sublinear pressure coefficients for the suitable transitions. These coefficients, along on the given elastic constants of CdTe and InSb, were then employed to derive exact values of the hydrostatic and uniaxial deformation potentials of CdTe.

Original languageEnglish
Pages (from-to)4136-4144
Number of pages9
JournalJournal of Applied Physics
Volume74
Issue number6
DOIs
Publication statusPublished - 1993 Jan 1
Externally publishedYes

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tuning
reflectance
photoluminescence
coefficients
hydrostatics
elastic properties
signatures
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Boley, M. S., Thomas, R. J., Chandrasekhar, M., Chandrasekhar, H. R., Ramdas, A. K., Kobayashi, M., & Gunshor, R. L. (1993). Pressure tuning of strain in CdTe/InSb epilayer: a photoluminescence and photomodulated reflectivity study. Journal of Applied Physics, 74(6), 4136-4144. https://doi.org/10.1063/1.354415

Pressure tuning of strain in CdTe/InSb epilayer : a photoluminescence and photomodulated reflectivity study. / Boley, Mark S.; Thomas, Robert J.; Chandrasekhar, Meera; Chandrasekhar, H. R.; Ramdas, A. K.; Kobayashi, Masakazu; Gunshor, R. L.

In: Journal of Applied Physics, Vol. 74, No. 6, 01.01.1993, p. 4136-4144.

Research output: Contribution to journalArticle

Boley, MS, Thomas, RJ, Chandrasekhar, M, Chandrasekhar, HR, Ramdas, AK, Kobayashi, M & Gunshor, RL 1993, 'Pressure tuning of strain in CdTe/InSb epilayer: a photoluminescence and photomodulated reflectivity study', Journal of Applied Physics, vol. 74, no. 6, pp. 4136-4144. https://doi.org/10.1063/1.354415
Boley, Mark S. ; Thomas, Robert J. ; Chandrasekhar, Meera ; Chandrasekhar, H. R. ; Ramdas, A. K. ; Kobayashi, Masakazu ; Gunshor, R. L. / Pressure tuning of strain in CdTe/InSb epilayer : a photoluminescence and photomodulated reflectivity study. In: Journal of Applied Physics. 1993 ; Vol. 74, No. 6. pp. 4136-4144.
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