Probing intrinsic polarization properties in bismuth-layered ferroelectric films

Takayuki Watanabe, Hiroshi Funakubo, Minoru Osada, Hiroshi Uchida, Isao Okada, Brian J. Rodriguez, Alexei Gruverman

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Abstract

The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization-electric field hysteresis. In epitaxially grown (Bi4-x Ndx) Ti3 O12 (0≤x≤0.73) films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4-x Ndx) Ti3 O12 films, and the intrinsic Ps of 67 μC cm2 is estimated for pure Bi4 Ti3 O12, superior to 50 μC cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.

Original languageEnglish
Article number112914
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
Publication statusPublished - 2007
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Watanabe, T., Funakubo, H., Osada, M., Uchida, H., Okada, I., Rodriguez, B. J., & Gruverman, A. (2007). Probing intrinsic polarization properties in bismuth-layered ferroelectric films. Applied Physics Letters, 90(11), [112914]. https://doi.org/10.1063/1.2713858