Probing intrinsic polarization properties in bismuth-layered ferroelectric films

Takayuki Watanabe; Hiroshi Funakubo; Minoru Osada; Hiroshi Uchida; Isao Okada; Brian J. Rodriguez; Alexei Gruverman

doi:10.1063/1.2713858

Probing intrinsic polarization properties in bismuth-layered ferroelectric films

Takayuki Watanabe^*, Hiroshi Funakubo, Minoru Osada, Hiroshi Uchida, Isao Okada, Brian J. Rodriguez, Alexei Gruverman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization-electric field hysteresis. In epitaxially grown (Bi4-x Ndx) Ti3 O12 (0≤x≤0.73) films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4-x Ndx) Ti3 O12 films, and the intrinsic Ps of 67 μC cm2 is estimated for pure Bi4 Ti3 O12, superior to 50 μC cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.

Original language	English
Article number	112914
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2713858
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2713858

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abstract = "The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization-electric field hysteresis. In epitaxially grown (Bi4-x Ndx) Ti3 O12 (0≤x≤0.73) films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4-x Ndx) Ti3 O12 films, and the intrinsic Ps of 67 μC cm2 is estimated for pure Bi4 Ti3 O12, superior to 50 μC cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.",

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AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Osada, Minoru

AU - Uchida, Hiroshi

AU - Okada, Isao

AU - Rodriguez, Brian J.

AU - Gruverman, Alexei

PY - 2007

Y1 - 2007

N2 - The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization-electric field hysteresis. In epitaxially grown (Bi4-x Ndx) Ti3 O12 (0≤x≤0.73) films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4-x Ndx) Ti3 O12 films, and the intrinsic Ps of 67 μC cm2 is estimated for pure Bi4 Ti3 O12, superior to 50 μC cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.

AB - The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization-electric field hysteresis. In epitaxially grown (Bi4-x Ndx) Ti3 O12 (0≤x≤0.73) films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4-x Ndx) Ti3 O12 films, and the intrinsic Ps of 67 μC cm2 is estimated for pure Bi4 Ti3 O12, superior to 50 μC cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.

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Probing intrinsic polarization properties in bismuth-layered ferroelectric films

Abstract

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