Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

Hideyuki Yamazaki, Mitsuo Koike, Masumi Saitoh, Mitsuhiro Tomita, Ryo Yokogawa, Naomi Sawamoto, Motohiro Tomita, Daisuke Kosemura, Atsushi Ogura

Research output: Contribution to journalArticle

Abstract

Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.

Original languageEnglish
Article number16549
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1
Externally publishedYes

Fingerprint

amorphous silicon
nanocrystals
Raman spectroscopy
silicon
thin films
data acquisition
charge coupled devices
film thickness
mirrors
solid state
intervals
detectors

ASJC Scopus subject areas

  • General

Cite this

Yamazaki, H., Koike, M., Saitoh, M., Tomita, M., Yokogawa, R., Sawamoto, N., ... Ogura, A. (2017). Probing spatial heterogeneity in silicon thin films by Raman spectroscopy. Scientific Reports, 7(1), [16549]. https://doi.org/10.1038/s41598-017-16724-4

Probing spatial heterogeneity in silicon thin films by Raman spectroscopy. / Yamazaki, Hideyuki; Koike, Mitsuo; Saitoh, Masumi; Tomita, Mitsuhiro; Yokogawa, Ryo; Sawamoto, Naomi; Tomita, Motohiro; Kosemura, Daisuke; Ogura, Atsushi.

In: Scientific Reports, Vol. 7, No. 1, 16549, 01.12.2017.

Research output: Contribution to journalArticle

Yamazaki, H, Koike, M, Saitoh, M, Tomita, M, Yokogawa, R, Sawamoto, N, Tomita, M, Kosemura, D & Ogura, A 2017, 'Probing spatial heterogeneity in silicon thin films by Raman spectroscopy', Scientific Reports, vol. 7, no. 1, 16549. https://doi.org/10.1038/s41598-017-16724-4
Yamazaki H, Koike M, Saitoh M, Tomita M, Yokogawa R, Sawamoto N et al. Probing spatial heterogeneity in silicon thin films by Raman spectroscopy. Scientific Reports. 2017 Dec 1;7(1). 16549. https://doi.org/10.1038/s41598-017-16724-4
Yamazaki, Hideyuki ; Koike, Mitsuo ; Saitoh, Masumi ; Tomita, Mitsuhiro ; Yokogawa, Ryo ; Sawamoto, Naomi ; Tomita, Motohiro ; Kosemura, Daisuke ; Ogura, Atsushi. / Probing spatial heterogeneity in silicon thin films by Raman spectroscopy. In: Scientific Reports. 2017 ; Vol. 7, No. 1.
@article{292247d3e99b4b1090dcb1cd5fff2efe,
title = "Probing spatial heterogeneity in silicon thin films by Raman spectroscopy",
abstract = "Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.",
author = "Hideyuki Yamazaki and Mitsuo Koike and Masumi Saitoh and Mitsuhiro Tomita and Ryo Yokogawa and Naomi Sawamoto and Motohiro Tomita and Daisuke Kosemura and Atsushi Ogura",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-16724-4",
language = "English",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

AU - Yamazaki, Hideyuki

AU - Koike, Mitsuo

AU - Saitoh, Masumi

AU - Tomita, Mitsuhiro

AU - Yokogawa, Ryo

AU - Sawamoto, Naomi

AU - Tomita, Motohiro

AU - Kosemura, Daisuke

AU - Ogura, Atsushi

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.

AB - Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=85036537396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85036537396&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-16724-4

DO - 10.1038/s41598-017-16724-4

M3 - Article

AN - SCOPUS:85036537396

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 16549

ER -