Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

Atsushi Tanaka*, Takahiko Yanagitani, Mami Matsukawa, Watanabe Yoshiaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

Original languageEnglish
Title of host publication2007 IEEE Ultrasonics Symposium Proceedings, IUS
Number of pages4
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States
Duration: 2007 Oct 282007 Oct 31

Publication series

NameProceedings - IEEE Ultrasonics Symposium
ISSN (Print)1051-0117


Other2007 IEEE Ultrasonics Symposium, IUS
Country/TerritoryUnited States
CityNew York, NY


  • (112̄0) textured ZnO film
  • RF magnetron sputtering
  • SH-SAW

ASJC Scopus subject areas

  • Acoustics and Ultrasonics


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