Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

Atsushi Tanaka; Takahiko Yanagitani; Mami Matsukawa; Watanabe Yoshiaki

doi:10.1109/ULTSYM.2007.81

Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

Atsushi Tanaka^*, Takahiko Yanagitani, Mami Matsukawa, Watanabe Yoshiaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K²) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K² value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

Original language	English
Title of host publication	2007 IEEE Ultrasonics Symposium Proceedings, IUS
Pages	280-283
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2007.81
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States Duration: 2007 Oct 28 → 2007 Oct 31

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Other

Other	2007 IEEE Ultrasonics Symposium, IUS
Country/Territory	United States
City	New York, NY
Period	07/10/28 → 07/10/31

Keywords

(112̄0) textured ZnO film
RF magnetron sputtering
SH-SAW

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2007.81

Cite this

Tanaka, A, Yanagitani, T, Matsukawa, M & Yoshiaki, W 2007, Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures. in 2007 IEEE Ultrasonics Symposium Proceedings, IUS., 4409654, Proceedings - IEEE Ultrasonics Symposium, pp. 280-283, 2007 IEEE Ultrasonics Symposium, IUS, New York, NY, United States, 07/10/28. https://doi.org/10.1109/ULTSYM.2007.81

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title = "Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures",

abstract = "A (11{\=2}0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.",

keywords = "(11{\=2}0) textured ZnO film, RF magnetron sputtering, SH-SAW",

author = "Atsushi Tanaka and Takahiko Yanagitani and Mami Matsukawa and Watanabe Yoshiaki",

year = "2007",

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TY - GEN

T1 - Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

AU - Tanaka, Atsushi

AU - Yanagitani, Takahiko

AU - Matsukawa, Mami

AU - Yoshiaki, Watanabe

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

AB - A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

KW - (112̄0) textured ZnO film

KW - RF magnetron sputtering

KW - SH-SAW

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BT - 2007 IEEE Ultrasonics Symposium Proceedings, IUS

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Y2 - 28 October 2007 through 31 October 2007

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Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

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Keywords

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