Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

Atsushi Tanaka, Takahiko Yanagitani, Mami Matsukawa, Watanabe Yoshiaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
Pages280-283
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States
Duration: 2007 Oct 282007 Oct 31

Other

Other2007 IEEE Ultrasonics Symposium, IUS
CountryUnited States
CityNew York, NY
Period07/10/2807/10/31

Fingerprint

Fused silica
Substrates
Electromechanical coupling
Magnetron sputtering
Silicon
Electrodes

Keywords

  • (112̄0) textured ZnO film
  • RF magnetron sputtering
  • SH-SAW

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tanaka, A., Yanagitani, T., Matsukawa, M., & Yoshiaki, W. (2007). Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures. In Proceedings - IEEE Ultrasonics Symposium (pp. 280-283). [4409654] https://doi.org/10.1109/ULTSYM.2007.81

Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures. / Tanaka, Atsushi; Yanagitani, Takahiko; Matsukawa, Mami; Yoshiaki, Watanabe.

Proceedings - IEEE Ultrasonics Symposium. 2007. p. 280-283 4409654.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, A, Yanagitani, T, Matsukawa, M & Yoshiaki, W 2007, Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures. in Proceedings - IEEE Ultrasonics Symposium., 4409654, pp. 280-283, 2007 IEEE Ultrasonics Symposium, IUS, New York, NY, United States, 07/10/28. https://doi.org/10.1109/ULTSYM.2007.81
Tanaka A, Yanagitani T, Matsukawa M, Yoshiaki W. Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures. In Proceedings - IEEE Ultrasonics Symposium. 2007. p. 280-283. 4409654 https://doi.org/10.1109/ULTSYM.2007.81
Tanaka, Atsushi ; Yanagitani, Takahiko ; Matsukawa, Mami ; Yoshiaki, Watanabe. / Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures. Proceedings - IEEE Ultrasonics Symposium. 2007. pp. 280-283
@inproceedings{3a2af58dd41a44e784cdda78ac4306d8,
title = "Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures",
abstract = "A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 {\%} at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.",
keywords = "(112̄0) textured ZnO film, RF magnetron sputtering, SH-SAW",
author = "Atsushi Tanaka and Takahiko Yanagitani and Mami Matsukawa and Watanabe Yoshiaki",
year = "2007",
doi = "10.1109/ULTSYM.2007.81",
language = "English",
isbn = "1424413834",
pages = "280--283",
booktitle = "Proceedings - IEEE Ultrasonics Symposium",

}

TY - GEN

T1 - Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

AU - Tanaka, Atsushi

AU - Yanagitani, Takahiko

AU - Matsukawa, Mami

AU - Yoshiaki, Watanabe

PY - 2007

Y1 - 2007

N2 - A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

AB - A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

KW - (112̄0) textured ZnO film

KW - RF magnetron sputtering

KW - SH-SAW

UR - http://www.scopus.com/inward/record.url?scp=48149095212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48149095212&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2007.81

DO - 10.1109/ULTSYM.2007.81

M3 - Conference contribution

AN - SCOPUS:48149095212

SN - 1424413834

SN - 9781424413836

SP - 280

EP - 283

BT - Proceedings - IEEE Ultrasonics Symposium

ER -