Properties of (111) diamond homoepitaxial layer and its application to field-effect transistor

Makoto Kasu*, Michal Kubovic, Aleksandar Aleksov, Nikolai Teofilov, Rolf Sauer, Erhard Kohn, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The (111)-oriented chemical-vapor-deposited diamond homoepitaxial layers with low defect density exhibited well-resolved free-exciton transitions in cathodoluminescence at 13 K and a sharp peak at 1332 cm -1 (linewidth: 1.9 cm -1) in Raman scattering. Furthermore, using these (111) layers, we fabricated metal-semiconductor field-effect transistors (FETs). FETs with an 11-μm-long gate exhibited a maximum drain current of 24 mA/mm and maximum transconductance of 14 mS/mm. These values are of the same order as those for the (001) orientation.

Original languageEnglish
Pages (from-to)L975-L977
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number7 B
Publication statusPublished - 2004 Jul 15
Externally publishedYes


  • Cathodoluminescence
  • Chemical vapor deposition
  • Diamond
  • Field-effect transistor
  • Hydrogen termination
  • Raman scattering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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