Properties of II-VI/III-V heterovalent interfaces

R. L. Gunshor, Masakazu Kobayashi, N. Otsuka, A. V. Nurmikko

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Abstract

The paper addresses two issues related to II-VI/III-V heterostructures. The first topic is a discussion of the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. The bonding is studied by means of in situ X-ray photoelectron spectroscopy (XPS). A comparison of the In 3d core level features from an InSb epilayer suface, a Te-reacted InSb surface, very thin (a few monolayers thick) CdTe/InSb epilayer/epilayer heterostructures and from deliberately grown (In, Te) epilayers, indicate that the Te-reacted layer, the CdTe/InSb heterostructures and the (In, Te) epilayers exhibit similar In bonding characteristics. A parallel XPS study of ZnSe/GaAs interfaces reinforces the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming II-VI/III-V junctions. The second topic concerns a description of pn junction light emitting devices based on ZnSe. In the structures described, carriers are injected from nitrogen doped p-ZnSe and chlorine doped n-ZnSe into a multiple quantum well structure having (Zn,Cd)Se wells and ZnSe barriers. The bright CW photon emission originates from quantum well transitions.

Original languageEnglish
Pages (from-to)652-659
Number of pages8
JournalJournal of Crystal Growth
Volume115
Issue number1-4
DOIs
Publication statusPublished - 1991 Dec 2
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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