TY - JOUR
T1 - Properties of II-VI/III-V heterovalent interfaces
AU - Gunshor, R. L.
AU - Kobayashi, M.
AU - Otsuka, N.
AU - Nurmikko, A. V.
N1 - Funding Information:
The XPS measurement and interpretation were performed in collaboration with J. Qiu and D. Menke. The authors are indebted to J.H. Weaver for providing the curve fitting software for the XPS data analysis, and for a discussion of the results. The authors thank W.N. Delgass and his co-workers for fruitful discussions about the XPS technique, and also acknowledge the contrihu-tions to this work by D.A. Luhelski, J. Han, ‘I’. Stavrinides. Y. Nakamura, and D. Li. This work is supported by AFOSR (AFOSR-89-0438). the DARPA/ONR URI (218-25015). and NSF/ M RG (891 3706-DM R).
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1991/12/2
Y1 - 1991/12/2
N2 - The paper addresses two issues related to II-VI/III-V heterostructures. The first topic is a discussion of the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. The bonding is studied by means of in situ X-ray photoelectron spectroscopy (XPS). A comparison of the In 3d core level features from an InSb epilayer suface, a Te-reacted InSb surface, very thin (a few monolayers thick) CdTe/InSb epilayer/epilayer heterostructures and from deliberately grown (In, Te) epilayers, indicate that the Te-reacted layer, the CdTe/InSb heterostructures and the (In, Te) epilayers exhibit similar In bonding characteristics. A parallel XPS study of ZnSe/GaAs interfaces reinforces the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming II-VI/III-V junctions. The second topic concerns a description of pn junction light emitting devices based on ZnSe. In the structures described, carriers are injected from nitrogen doped p-ZnSe and chlorine doped n-ZnSe into a multiple quantum well structure having (Zn,Cd)Se wells and ZnSe barriers. The bright CW photon emission originates from quantum well transitions.
AB - The paper addresses two issues related to II-VI/III-V heterostructures. The first topic is a discussion of the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. The bonding is studied by means of in situ X-ray photoelectron spectroscopy (XPS). A comparison of the In 3d core level features from an InSb epilayer suface, a Te-reacted InSb surface, very thin (a few monolayers thick) CdTe/InSb epilayer/epilayer heterostructures and from deliberately grown (In, Te) epilayers, indicate that the Te-reacted layer, the CdTe/InSb heterostructures and the (In, Te) epilayers exhibit similar In bonding characteristics. A parallel XPS study of ZnSe/GaAs interfaces reinforces the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming II-VI/III-V junctions. The second topic concerns a description of pn junction light emitting devices based on ZnSe. In the structures described, carriers are injected from nitrogen doped p-ZnSe and chlorine doped n-ZnSe into a multiple quantum well structure having (Zn,Cd)Se wells and ZnSe barriers. The bright CW photon emission originates from quantum well transitions.
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U2 - 10.1016/0022-0248(91)90821-L
DO - 10.1016/0022-0248(91)90821-L
M3 - Article
AN - SCOPUS:0026414733
VL - 115
SP - 652
EP - 659
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -