Abstract
The paper addresses two issues related to II-VI/III-V heterostructures. The first topic is a discussion of the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. The bonding is studied by means of in situ X-ray photoelectron spectroscopy (XPS). A comparison of the In 3d core level features from an InSb epilayer suface, a Te-reacted InSb surface, very thin (a few monolayers thick) CdTe/InSb epilayer/epilayer heterostructures and from deliberately grown (In, Te) epilayers, indicate that the Te-reacted layer, the CdTe/InSb heterostructures and the (In, Te) epilayers exhibit similar In bonding characteristics. A parallel XPS study of ZnSe/GaAs interfaces reinforces the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming II-VI/III-V junctions. The second topic concerns a description of pn junction light emitting devices based on ZnSe. In the structures described, carriers are injected from nitrogen doped p-ZnSe and chlorine doped n-ZnSe into a multiple quantum well structure having (Zn,Cd)Se wells and ZnSe barriers. The bright CW photon emission originates from quantum well transitions.
| Original language | English |
|---|---|
| Pages (from-to) | 652-659 |
| Number of pages | 8 |
| Journal | Journal of Crystal Growth |
| Volume | 115 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1991 Dec 2 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Properties of II-VI/III-V heterovalent interfaces. / Gunshor, R. L.; Kobayashi, Masakazu; Otsuka, N.; Nurmikko, A. V.
In: Journal of Crystal Growth, Vol. 115, No. 1-4, 02.12.1991, p. 652-659.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Properties of II-VI/III-V heterovalent interfaces
AU - Gunshor, R. L.
AU - Kobayashi, Masakazu
AU - Otsuka, N.
AU - Nurmikko, A. V.
PY - 1991/12/2
Y1 - 1991/12/2
N2 - The paper addresses two issues related to II-VI/III-V heterostructures. The first topic is a discussion of the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. The bonding is studied by means of in situ X-ray photoelectron spectroscopy (XPS). A comparison of the In 3d core level features from an InSb epilayer suface, a Te-reacted InSb surface, very thin (a few monolayers thick) CdTe/InSb epilayer/epilayer heterostructures and from deliberately grown (In, Te) epilayers, indicate that the Te-reacted layer, the CdTe/InSb heterostructures and the (In, Te) epilayers exhibit similar In bonding characteristics. A parallel XPS study of ZnSe/GaAs interfaces reinforces the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming II-VI/III-V junctions. The second topic concerns a description of pn junction light emitting devices based on ZnSe. In the structures described, carriers are injected from nitrogen doped p-ZnSe and chlorine doped n-ZnSe into a multiple quantum well structure having (Zn,Cd)Se wells and ZnSe barriers. The bright CW photon emission originates from quantum well transitions.
AB - The paper addresses two issues related to II-VI/III-V heterostructures. The first topic is a discussion of the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. The bonding is studied by means of in situ X-ray photoelectron spectroscopy (XPS). A comparison of the In 3d core level features from an InSb epilayer suface, a Te-reacted InSb surface, very thin (a few monolayers thick) CdTe/InSb epilayer/epilayer heterostructures and from deliberately grown (In, Te) epilayers, indicate that the Te-reacted layer, the CdTe/InSb heterostructures and the (In, Te) epilayers exhibit similar In bonding characteristics. A parallel XPS study of ZnSe/GaAs interfaces reinforces the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming II-VI/III-V junctions. The second topic concerns a description of pn junction light emitting devices based on ZnSe. In the structures described, carriers are injected from nitrogen doped p-ZnSe and chlorine doped n-ZnSe into a multiple quantum well structure having (Zn,Cd)Se wells and ZnSe barriers. The bright CW photon emission originates from quantum well transitions.
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UR - http://www.scopus.com/inward/citedby.url?scp=0026414733&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(91)90821-L
DO - 10.1016/0022-0248(91)90821-L
M3 - Article
VL - 115
SP - 652
EP - 659
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -