Properties of optical phonons in cubic InxGa1-xN

K. Torii, N. Usukura, A. Nakamura, T. Sota, S. F. Chichibu, T. Kitamura, H. Okumura

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Abstract

The properties of zone center optical phonons in ternary cubic InxGa1-xN were studied. The infrared reflectance spectroscopy and auxiliary Raman spectra confirmed the one-mode behavior of phonons. The optical phonons behavior was found to be type I and was arised from both the small mass ratio of Ga to In atoms and the strong ionicity of Ga-N and IN-N bonds.

Original languageEnglish
Pages (from-to)52-54
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number1
DOIs
Publication statusPublished - 2003 Jan 6

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Torii, K., Usukura, N., Nakamura, A., Sota, T., Chichibu, S. F., Kitamura, T., & Okumura, H. (2003). Properties of optical phonons in cubic InxGa1-xN. Applied Physics Letters, 82(1), 52-54. https://doi.org/10.1063/1.1535273