Property design of Bi4Ti3O12-based thin films using a site-engineered concept

H. Funakubo, T. Watanabe, T. Kojima, T. Sakai, Y. Noguchi, M. Miyayama, M. Osada, M. Kakihana, K. Saito

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.

Original languageEnglish
Pages (from-to)180-185
Number of pages6
JournalJournal of Crystal Growth
Volume248
Issue numberSUPPL.
DOIs
Publication statusPublished - 2003 Feb
Externally publishedYes

Fingerprint

Ferroelectric materials
Substitution reactions
substitutes
Polarization
Thin films
Crystals
polarization
thin films
crystals
Temperature
temperature

Keywords

  • A3. Metal organic chemical vapor deposition phase
  • B1. Oxide
  • B2. Ferroelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Funakubo, H., Watanabe, T., Kojima, T., Sakai, T., Noguchi, Y., Miyayama, M., ... Saito, K. (2003). Property design of Bi4Ti3O12-based thin films using a site-engineered concept. Journal of Crystal Growth, 248(SUPPL.), 180-185. https://doi.org/10.1016/S0022-0248(02)02047-X

Property design of Bi4Ti3O12-based thin films using a site-engineered concept. / Funakubo, H.; Watanabe, T.; Kojima, T.; Sakai, T.; Noguchi, Y.; Miyayama, M.; Osada, M.; Kakihana, M.; Saito, K.

In: Journal of Crystal Growth, Vol. 248, No. SUPPL., 02.2003, p. 180-185.

Research output: Contribution to journalArticle

Funakubo, H, Watanabe, T, Kojima, T, Sakai, T, Noguchi, Y, Miyayama, M, Osada, M, Kakihana, M & Saito, K 2003, 'Property design of Bi4Ti3O12-based thin films using a site-engineered concept', Journal of Crystal Growth, vol. 248, no. SUPPL., pp. 180-185. https://doi.org/10.1016/S0022-0248(02)02047-X
Funakubo H, Watanabe T, Kojima T, Sakai T, Noguchi Y, Miyayama M et al. Property design of Bi4Ti3O12-based thin films using a site-engineered concept. Journal of Crystal Growth. 2003 Feb;248(SUPPL.):180-185. https://doi.org/10.1016/S0022-0248(02)02047-X
Funakubo, H. ; Watanabe, T. ; Kojima, T. ; Sakai, T. ; Noguchi, Y. ; Miyayama, M. ; Osada, M. ; Kakihana, M. ; Saito, K. / Property design of Bi4Ti3O12-based thin films using a site-engineered concept. In: Journal of Crystal Growth. 2003 ; Vol. 248, No. SUPPL. pp. 180-185.
@article{ff2419a390f7458d98fb0b4412ad1ead,
title = "Property design of Bi4Ti3O12-based thin films using a site-engineered concept",
abstract = "A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.",
keywords = "A3. Metal organic chemical vapor deposition phase, B1. Oxide, B2. Ferroelectric materials",
author = "H. Funakubo and T. Watanabe and T. Kojima and T. Sakai and Y. Noguchi and M. Miyayama and M. Osada and M. Kakihana and K. Saito",
year = "2003",
month = "2",
doi = "10.1016/S0022-0248(02)02047-X",
language = "English",
volume = "248",
pages = "180--185",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "SUPPL.",

}

TY - JOUR

T1 - Property design of Bi4Ti3O12-based thin films using a site-engineered concept

AU - Funakubo, H.

AU - Watanabe, T.

AU - Kojima, T.

AU - Sakai, T.

AU - Noguchi, Y.

AU - Miyayama, M.

AU - Osada, M.

AU - Kakihana, M.

AU - Saito, K.

PY - 2003/2

Y1 - 2003/2

N2 - A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.

AB - A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.

KW - A3. Metal organic chemical vapor deposition phase

KW - B1. Oxide

KW - B2. Ferroelectric materials

UR - http://www.scopus.com/inward/record.url?scp=0037291772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037291772&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02047-X

DO - 10.1016/S0022-0248(02)02047-X

M3 - Article

VL - 248

SP - 180

EP - 185

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - SUPPL.

ER -