Property design of Bi4Ti3O12-based thin films using a site-engineered concept

H. Funakubo, T. Watanabe, T. Kojima, T. Sakai, Y. Noguchi, M. Miyayama, M. Osada, M. Kakihana, K. Saito

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Abstract

A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.

Original languageEnglish
Pages (from-to)180-185
Number of pages6
JournalJournal of Crystal Growth
Volume248
Issue numberSUPPL.
DOIs
Publication statusPublished - 2003 Feb
Externally publishedYes

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Keywords

  • A3. Metal organic chemical vapor deposition phase
  • B1. Oxide
  • B2. Ferroelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Funakubo, H., Watanabe, T., Kojima, T., Sakai, T., Noguchi, Y., Miyayama, M., Osada, M., Kakihana, M., & Saito, K. (2003). Property design of Bi4Ti3O12-based thin films using a site-engineered concept. Journal of Crystal Growth, 248(SUPPL.), 180-185. https://doi.org/10.1016/S0022-0248(02)02047-X