Proposal of novel InGaAsP/InP multi-mode interference photonic switches

Shuuichi Nagai, Norihito Kogure, Goh Morishima, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8μm wide and 540μm long. The characteristics can be improved by optimizing cladding index and/or index-modulated region's width. Actually we fabricated the InGaAsP/InP MIPS with partial current injection regions, and at present preliminary transmission property with no index change was observed.

    Original languageEnglish
    Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
    PublisherIEEE
    Pages691-694
    Number of pages4
    Publication statusPublished - 1998
    EventProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
    Duration: 1998 May 111998 May 15

    Other

    OtherProceedings of the 1998 International Conference on Indium Phosphide and Related Materials
    CityTsukuba, Jpn
    Period98/5/1198/5/15

    Fingerprint

    Semiconductor switches
    Switching functions
    Optical switches
    Finite difference time domain method
    proposals
    Refractive index
    Waveguides
    switches
    photonics
    interference
    finite difference time domain method
    refractivity
    injection
    waveguides
    output

    ASJC Scopus subject areas

    • Materials Science(all)
    • Physics and Astronomy(all)

    Cite this

    Nagai, S., Kogure, N., Morishima, G., & Utaka, K. (1998). Proposal of novel InGaAsP/InP multi-mode interference photonic switches. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 691-694). IEEE.

    Proposal of novel InGaAsP/InP multi-mode interference photonic switches. / Nagai, Shuuichi; Kogure, Norihito; Morishima, Goh; Utaka, Katsuyuki.

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1998. p. 691-694.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Nagai, S, Kogure, N, Morishima, G & Utaka, K 1998, Proposal of novel InGaAsP/InP multi-mode interference photonic switches. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, pp. 691-694, Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials, Tsukuba, Jpn, 98/5/11.
    Nagai S, Kogure N, Morishima G, Utaka K. Proposal of novel InGaAsP/InP multi-mode interference photonic switches. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE. 1998. p. 691-694
    Nagai, Shuuichi ; Kogure, Norihito ; Morishima, Goh ; Utaka, Katsuyuki. / Proposal of novel InGaAsP/InP multi-mode interference photonic switches. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1998. pp. 691-694
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    abstract = "We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8μm wide and 540μm long. The characteristics can be improved by optimizing cladding index and/or index-modulated region's width. Actually we fabricated the InGaAsP/InP MIPS with partial current injection regions, and at present preliminary transmission property with no index change was observed.",
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