Abstract
Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.
| Original language | English |
|---|---|
| Article number | 091906 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates. / Koyama, T.; Onuma, T.; Masui, H.; Chakraborty, A.; Haskell, B. A.; Keller, S.; Mishra, U. K.; Speck, J. S.; Nakamura, S.; DenBaars, S. P.; Sota, Takayuki; Chichibu, S. F.
In: Applied Physics Letters, Vol. 89, No. 9, 091906, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates
AU - Koyama, T.
AU - Onuma, T.
AU - Masui, H.
AU - Chakraborty, A.
AU - Haskell, B. A.
AU - Keller, S.
AU - Mishra, U. K.
AU - Speck, J. S.
AU - Nakamura, S.
AU - DenBaars, S. P.
AU - Sota, Takayuki
AU - Chichibu, S. F.
PY - 2006
Y1 - 2006
N2 - Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.
AB - Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.
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U2 - 10.1063/1.2337085
DO - 10.1063/1.2337085
M3 - Article
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 091906
ER -