Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, Takayuki Sota, S. F. Chichibu

    Research output: Contribution to journalArticle

    74 Citations (Scopus)

    Abstract

    Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

    Original languageEnglish
    Article number091906
    JournalApplied Physics Letters
    Volume89
    Issue number9
    DOIs
    Publication statusPublished - 2006

    Fingerprint

    light emitting diodes
    polarization
    quantum wells
    Stark effect
    quantum efficiency
    electric fields
    defects

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates. / Koyama, T.; Onuma, T.; Masui, H.; Chakraborty, A.; Haskell, B. A.; Keller, S.; Mishra, U. K.; Speck, J. S.; Nakamura, S.; DenBaars, S. P.; Sota, Takayuki; Chichibu, S. F.

    In: Applied Physics Letters, Vol. 89, No. 9, 091906, 2006.

    Research output: Contribution to journalArticle

    Koyama, T, Onuma, T, Masui, H, Chakraborty, A, Haskell, BA, Keller, S, Mishra, UK, Speck, JS, Nakamura, S, DenBaars, SP, Sota, T & Chichibu, SF 2006, 'Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates', Applied Physics Letters, vol. 89, no. 9, 091906. https://doi.org/10.1063/1.2337085
    Koyama, T. ; Onuma, T. ; Masui, H. ; Chakraborty, A. ; Haskell, B. A. ; Keller, S. ; Mishra, U. K. ; Speck, J. S. ; Nakamura, S. ; DenBaars, S. P. ; Sota, Takayuki ; Chichibu, S. F. / Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates. In: Applied Physics Letters. 2006 ; Vol. 89, No. 9.
    @article{84886b1b6b2f40f3bb970e8ba40f7f73,
    title = "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates",
    abstract = "Prospective equivalent internal quantum efficiency (ηint) of approximately 34{\%} at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70{\%}), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.",
    author = "T. Koyama and T. Onuma and H. Masui and A. Chakraborty and Haskell, {B. A.} and S. Keller and Mishra, {U. K.} and Speck, {J. S.} and S. Nakamura and DenBaars, {S. P.} and Takayuki Sota and Chichibu, {S. F.}",
    year = "2006",
    doi = "10.1063/1.2337085",
    language = "English",
    volume = "89",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "9",

    }

    TY - JOUR

    T1 - Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    AU - Koyama, T.

    AU - Onuma, T.

    AU - Masui, H.

    AU - Chakraborty, A.

    AU - Haskell, B. A.

    AU - Keller, S.

    AU - Mishra, U. K.

    AU - Speck, J. S.

    AU - Nakamura, S.

    AU - DenBaars, S. P.

    AU - Sota, Takayuki

    AU - Chichibu, S. F.

    PY - 2006

    Y1 - 2006

    N2 - Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

    AB - Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

    UR - http://www.scopus.com/inward/record.url?scp=33748280010&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33748280010&partnerID=8YFLogxK

    U2 - 10.1063/1.2337085

    DO - 10.1063/1.2337085

    M3 - Article

    VL - 89

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 9

    M1 - 091906

    ER -