Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, S. F. Chichibu

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Abstract

Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

Original languageEnglish
Article number091906
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
Publication statusPublished - 2006 Sep 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Koyama, T., Onuma, T., Masui, H., Chakraborty, A., Haskell, B. A., Keller, S., Mishra, U. K., Speck, J. S., Nakamura, S., DenBaars, S. P., Sota, T., & Chichibu, S. F. (2006). Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates. Applied Physics Letters, 89(9), [091906]. https://doi.org/10.1063/1.2337085