Abstract
With a view to developing an ion sensor capable of simple measurement of ion concentration at the cell level, a micro ionsensitive FET (micro ISFET) has been studied. For this purpose, it is necessary that the micro ISFET be a probe structure whose tip size is smaller than the cell and that the ion‐sensitive gate be placed at the tip of the probe. Special micro fabrication techniques are required for such a micro ISFET. This paper describes a three‐dimensional processing technique to fabricate a microprobe from an Si wafer and a method for forming an ISFET on a Si probe. Based on these fabrication techniques, a fundamental design of the micro ISFET is performed. An Si3N4 gate micro ISFET for pH is fabricated that has a tip size of 10 μm and a gate area of 5 × 5 μm2. Its characteristics are evaluated.
| Original language | English |
|---|---|
| Pages (from-to) | 21-29 |
| Number of pages | 9 |
| Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
| Volume | 69 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1986 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
Prototype of micro ISFET for biomedical research. / Shoji, Shuichi; Esashi, Masayoshi; Matsuo, Tadayuki.
In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 69, No. 6, 1986, p. 21-29.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Prototype of micro ISFET for biomedical research
AU - Shoji, Shuichi
AU - Esashi, Masayoshi
AU - Matsuo, Tadayuki
PY - 1986
Y1 - 1986
N2 - With a view to developing an ion sensor capable of simple measurement of ion concentration at the cell level, a micro ionsensitive FET (micro ISFET) has been studied. For this purpose, it is necessary that the micro ISFET be a probe structure whose tip size is smaller than the cell and that the ion‐sensitive gate be placed at the tip of the probe. Special micro fabrication techniques are required for such a micro ISFET. This paper describes a three‐dimensional processing technique to fabricate a microprobe from an Si wafer and a method for forming an ISFET on a Si probe. Based on these fabrication techniques, a fundamental design of the micro ISFET is performed. An Si3N4 gate micro ISFET for pH is fabricated that has a tip size of 10 μm and a gate area of 5 × 5 μm2. Its characteristics are evaluated.
AB - With a view to developing an ion sensor capable of simple measurement of ion concentration at the cell level, a micro ionsensitive FET (micro ISFET) has been studied. For this purpose, it is necessary that the micro ISFET be a probe structure whose tip size is smaller than the cell and that the ion‐sensitive gate be placed at the tip of the probe. Special micro fabrication techniques are required for such a micro ISFET. This paper describes a three‐dimensional processing technique to fabricate a microprobe from an Si wafer and a method for forming an ISFET on a Si probe. Based on these fabrication techniques, a fundamental design of the micro ISFET is performed. An Si3N4 gate micro ISFET for pH is fabricated that has a tip size of 10 μm and a gate area of 5 × 5 μm2. Its characteristics are evaluated.
UR - http://www.scopus.com/inward/record.url?scp=84984282702&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84984282702&partnerID=8YFLogxK
U2 - 10.1002/ecjb.4420690603
DO - 10.1002/ecjb.4420690603
M3 - Article
AN - SCOPUS:84984282702
VL - 69
SP - 21
EP - 29
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 6
ER -