Prototype of the Stacked CdZnTe Semiconductor Detector for 16N Measurement

Nishizawa Hiroshi, Hiroshi Inujima, Fujiwara Hirotsugu, Nakamura Hiroaki

Research output: Contribution to journalArticle


The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13MeV ᵧ-ray from 16N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137Cs and 60Co, and 16N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident 7-ray energy and its intensity ratio was identified and that the energy of 6MeV 7-ray could be measured by the prototype of the stacked detector.

Original languageEnglish
Pages (from-to)458-463
Number of pages6
JournalIEEJ Transactions on Sensors and Micromachines
Issue number8
Publication statusPublished - 2001 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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