Proximity gettering of heavy metals by high-energy ion implantation

Takashi Kuroi, Youji Kawasaki, Shigeki Komori, Kouji Fukumoto, Masahide Inuishi, Katsuhiro Tsukamoto, Hiroshi Shinyashiki, Takayuki Shingyoji

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.

Original languageEnglish
Pages (from-to)303-307
Number of pages5
JournalJapanese journal of applied physics
Volume32
Issue number1 S
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Keywords

  • Contamination
  • Gettering
  • Heavy metal
  • High-energy ion implantation
  • Junction leakage current
  • Secondary defects
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H., & Shingyoji, T. (1993). Proximity gettering of heavy metals by high-energy ion implantation. Japanese journal of applied physics, 32(1 S), 303-307. https://doi.org/10.1143/JJAP.32.303