Proximity gettering of heavy metals by high-energy ion implantation

Takashi Kuroi, Youji Kawasaki, Shigeki Komori, Kouji Fukumoto, Masahide Inuishi, Katsuhiro Tsukamoto, Hiroshi Shinyashiki, Takayuki Shingyoji

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.

Original languageEnglish
Pages (from-to)303-307
Number of pages5
JournalJapanese Journal of Applied Physics
Volume32
Issue number1 S
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

heavy metals
Ion implantation
Heavy metals
Boron
ion implantation
proximity
implantation
Iron
Copper
Silicon
Atoms
Defects
boron
Leakage currents
iron
copper
Contamination
defects
silicon
atoms

Keywords

  • Contamination
  • Gettering
  • Heavy metal
  • High-energy ion implantation
  • Junction leakage current
  • Secondary defects
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., ... Shingyoji, T. (1993). Proximity gettering of heavy metals by high-energy ion implantation. Japanese Journal of Applied Physics, 32(1 S), 303-307. https://doi.org/10.1143/JJAP.32.303

Proximity gettering of heavy metals by high-energy ion implantation. / Kuroi, Takashi; Kawasaki, Youji; Komori, Shigeki; Fukumoto, Kouji; Inuishi, Masahide; Tsukamoto, Katsuhiro; Shinyashiki, Hiroshi; Shingyoji, Takayuki.

In: Japanese Journal of Applied Physics, Vol. 32, No. 1 S, 1993, p. 303-307.

Research output: Contribution to journalArticle

Kuroi, T, Kawasaki, Y, Komori, S, Fukumoto, K, Inuishi, M, Tsukamoto, K, Shinyashiki, H & Shingyoji, T 1993, 'Proximity gettering of heavy metals by high-energy ion implantation', Japanese Journal of Applied Physics, vol. 32, no. 1 S, pp. 303-307. https://doi.org/10.1143/JJAP.32.303
Kuroi, Takashi ; Kawasaki, Youji ; Komori, Shigeki ; Fukumoto, Kouji ; Inuishi, Masahide ; Tsukamoto, Katsuhiro ; Shinyashiki, Hiroshi ; Shingyoji, Takayuki. / Proximity gettering of heavy metals by high-energy ion implantation. In: Japanese Journal of Applied Physics. 1993 ; Vol. 32, No. 1 S. pp. 303-307.
@article{13abe26c93bb431db4f2e9f21e2a8d1f,
title = "Proximity gettering of heavy metals by high-energy ion implantation",
abstract = "We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.",
keywords = "Contamination, Gettering, Heavy metal, High-energy ion implantation, Junction leakage current, Secondary defects, Silicon",
author = "Takashi Kuroi and Youji Kawasaki and Shigeki Komori and Kouji Fukumoto and Masahide Inuishi and Katsuhiro Tsukamoto and Hiroshi Shinyashiki and Takayuki Shingyoji",
year = "1993",
doi = "10.1143/JJAP.32.303",
language = "English",
volume = "32",
pages = "303--307",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1 S",

}

TY - JOUR

T1 - Proximity gettering of heavy metals by high-energy ion implantation

AU - Kuroi, Takashi

AU - Kawasaki, Youji

AU - Komori, Shigeki

AU - Fukumoto, Kouji

AU - Inuishi, Masahide

AU - Tsukamoto, Katsuhiro

AU - Shinyashiki, Hiroshi

AU - Shingyoji, Takayuki

PY - 1993

Y1 - 1993

N2 - We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.

AB - We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.

KW - Contamination

KW - Gettering

KW - Heavy metal

KW - High-energy ion implantation

KW - Junction leakage current

KW - Secondary defects

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0027271396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027271396&partnerID=8YFLogxK

U2 - 10.1143/JJAP.32.303

DO - 10.1143/JJAP.32.303

M3 - Article

AN - SCOPUS:0027271396

VL - 32

SP - 303

EP - 307

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 S

ER -