Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi, Y. Kawasaki, S. Komori, K. Fukumoto, M. Inuishi, K. Tsukamoto, H. Shinyashiki, T. Shingyoji

Research output: Contribution to conferencePaper

Abstract

We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

Original languageEnglish
Pages398-400
Number of pages3
Publication statusPublished - 1992 Dec 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H., & Shingyoji, T. (1992). Proximity gettering of heavy metals by high energy ion implantation. 398-400. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .