Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi, Y. Kawasaki, S. Komori, K. Fukumoto, Masahide Inuishi, K. Tsukamoto, H. Shinyashiki, T. Shingyoji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages398-400
Number of pages3
Publication statusPublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

Fingerprint

Ion implantation
Heavy metals
Boron
Iron
Copper
Silicon
Atoms
Defects
Leakage currents

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., ... Shingyoji, T. (1992). Proximity gettering of heavy metals by high energy ion implantation. In Conference on Solid State Devices and Materials (pp. 398-400). Publ by Business Cent for Acad Soc Japan.

Proximity gettering of heavy metals by high energy ion implantation. / Kuroi, T.; Kawasaki, Y.; Komori, S.; Fukumoto, K.; Inuishi, Masahide; Tsukamoto, K.; Shinyashiki, H.; Shingyoji, T.

Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. p. 398-400.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuroi, T, Kawasaki, Y, Komori, S, Fukumoto, K, Inuishi, M, Tsukamoto, K, Shinyashiki, H & Shingyoji, T 1992, Proximity gettering of heavy metals by high energy ion implantation. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 398-400, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26.
Kuroi T, Kawasaki Y, Komori S, Fukumoto K, Inuishi M, Tsukamoto K et al. Proximity gettering of heavy metals by high energy ion implantation. In Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1992. p. 398-400
Kuroi, T. ; Kawasaki, Y. ; Komori, S. ; Fukumoto, K. ; Inuishi, Masahide ; Tsukamoto, K. ; Shinyashiki, H. ; Shingyoji, T. / Proximity gettering of heavy metals by high energy ion implantation. Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. pp. 398-400
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