Abstract
The thermal stability of electroless Ni-P alloy thin film resistors for pulse heating was investigated using the step stress test method. The resistance of electroless Ni-P resistors is decreased by pulse heating. It was confirmed by a micro x-ray diffraction analysis of the resistors after the step stress test that this resistance decrease is due to crystallization of the resistor films. The degree of crystallization can be quantitatively evaluated as the temperature coefficient of resistance of Ni-P films calculated from resistance changes during pulse heating. The step stress test is demonstrated to be an effective and quick method of determining the thermal stability of thin film resistors for pulse heating, and it also gives an evaluation of the temperature coefficient of resistance of thin film resistors.
| Original language | English |
|---|---|
| Pages (from-to) | 748-752 |
| Number of pages | 5 |
| Journal | Journal of the Electrochemical Society |
| Volume | 136 |
| Issue number | 3 |
| Publication status | Published - 1989 Mar |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Pulse heating method for investigation of electroless Ni-P alloy film resistors. / Osaka, Tetsuya; Kawaguchi, Jun; Sawai, Hideo.
In: Journal of the Electrochemical Society, Vol. 136, No. 3, 03.1989, p. 748-752.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Pulse heating method for investigation of electroless Ni-P alloy film resistors
AU - Osaka, Tetsuya
AU - Kawaguchi, Jun
AU - Sawai, Hideo
PY - 1989/3
Y1 - 1989/3
N2 - The thermal stability of electroless Ni-P alloy thin film resistors for pulse heating was investigated using the step stress test method. The resistance of electroless Ni-P resistors is decreased by pulse heating. It was confirmed by a micro x-ray diffraction analysis of the resistors after the step stress test that this resistance decrease is due to crystallization of the resistor films. The degree of crystallization can be quantitatively evaluated as the temperature coefficient of resistance of Ni-P films calculated from resistance changes during pulse heating. The step stress test is demonstrated to be an effective and quick method of determining the thermal stability of thin film resistors for pulse heating, and it also gives an evaluation of the temperature coefficient of resistance of thin film resistors.
AB - The thermal stability of electroless Ni-P alloy thin film resistors for pulse heating was investigated using the step stress test method. The resistance of electroless Ni-P resistors is decreased by pulse heating. It was confirmed by a micro x-ray diffraction analysis of the resistors after the step stress test that this resistance decrease is due to crystallization of the resistor films. The degree of crystallization can be quantitatively evaluated as the temperature coefficient of resistance of Ni-P films calculated from resistance changes during pulse heating. The step stress test is demonstrated to be an effective and quick method of determining the thermal stability of thin film resistors for pulse heating, and it also gives an evaluation of the temperature coefficient of resistance of thin film resistors.
UR - http://www.scopus.com/inward/record.url?scp=0024621744&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024621744&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0024621744
VL - 136
SP - 748
EP - 752
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 3
ER -