Abstract
The thermal stability of electroless Ni-P alloy thin film resistors for pulse heating was investigated using the step stress test method. The resistance of electroless Ni-P resistors is decreased by pulse heating. It was confirmed by a micro x-ray diffraction analysis of the resistors after the step stress test that this resistance decrease is due to crystallization of the resistor films. The degree of crystallization can be quantitatively evaluated as the temperature coefficient of resistance of Ni-P films calculated from resistance changes during pulse heating. The step stress test is demonstrated to be an effective and quick method of determining the thermal stability of thin film resistors for pulse heating, and it also gives an evaluation of the temperature coefficient of resistance of thin film resistors.
| Original language | English |
|---|---|
| Pages (from-to) | 748-752 |
| Number of pages | 5 |
| Journal | Journal of the Electrochemical Society |
| Volume | 136 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1989 Mar |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry