Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Takahiko Yanagitani, Masato Kiuch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.

Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
Pages90-93
Number of pages4
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China
Duration: 2008 Nov 22008 Nov 5

Other

Other2008 IEEE International Ultrasonics Symposium, IUS 2008
CountryChina
CityBeijing
Period08/11/208/11/5

Fingerprint

resonators
shear
curved surfaces
longitudinal waves
wave excitation
curves
thin films
grazing incidence
S waves
poles
ion beams
harmonics
acoustics
sensors
profiles
diffraction
x rays

Keywords

  • (11 2̄ 0)AlN film
  • In-plane and out-of-plane orientation
  • Ion beam sputter-deposition
  • Shear wave excitation

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Yanagitani, T., & Kiuch, M. (2008). Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films. In Proceedings - IEEE Ultrasonics Symposium (pp. 90-93). [4803528] https://doi.org/10.1109/ULTSYM.2008.0022

Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films. / Yanagitani, Takahiko; Kiuch, Masato.

Proceedings - IEEE Ultrasonics Symposium. 2008. p. 90-93 4803528.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yanagitani, T & Kiuch, M 2008, Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films. in Proceedings - IEEE Ultrasonics Symposium., 4803528, pp. 90-93, 2008 IEEE International Ultrasonics Symposium, IUS 2008, Beijing, China, 08/11/2. https://doi.org/10.1109/ULTSYM.2008.0022
Yanagitani T, Kiuch M. Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films. In Proceedings - IEEE Ultrasonics Symposium. 2008. p. 90-93. 4803528 https://doi.org/10.1109/ULTSYM.2008.0022
Yanagitani, Takahiko ; Kiuch, Masato. / Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films. Proceedings - IEEE Ultrasonics Symposium. 2008. pp. 90-93
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