Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films

Takahiko Yanagitani, M. Kiuch, M. Matsukawa, Y. Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents pure-shear mode film bulk acoustic wave resonators (FBARs) based on the (112̄0) textured ZnO and AlN films. We have also introduced FBAR structure consisting of two layers of the (112̄0) textured ZnO film with opposite polarization directions. This FBAR structure operated in second overtone pureshear mode, and allowed shear-mode FBARs at higher frequency. For ZnO films, the effective electromechanical coupling coefficients κ eff 2 of pure-shear mode FBAR and second overtone pure-shear mode FBAR in this study were found to be 3.3% and 0.8%, respectively. The temperature coefficient of frequency (TCF) for three types of FBARs were measured in the temperature range of 10-60 °C. TCF values of -63.1 ppm/°C, -34.7 ppm/°C, and -35.6 ppm/°C were found for the thickness extensional mode FBAR, the pure-shear mode FBAR, and the second overtone pure-shear mode FBAR, respectively. These results demonstrated that pure-shear mode FBARs have more stable temperature characteristics than the conventional thickness extensional mode FBARs. For AlN films, we report the first synthesis of the (112̄0) textured AlN film on a silica glass substrate. Shear wave excitation in the GHz range was demonstrated using AlN high overtone bulk acoustic resonator (HBAR) structure.

Original languageEnglish
Title of host publicationProceedings - European Conference on Noise Control
Pages4987-4992
Number of pages6
Publication statusPublished - 2008
Externally publishedYes
Event7th European Conference on Noise Control 2008, EURONOISE 2008 - Paris, France
Duration: 2008 Jun 292008 Jul 4

Other

Other7th European Conference on Noise Control 2008, EURONOISE 2008
CountryFrance
CityParis
Period08/6/2908/7/4

Fingerprint

Resonators
resonators
shear
Acoustic waves
acoustics
Temperature
harmonics
Acoustic resonators
Acoustics
Silicon Dioxide
Glass
Electromechanical coupling
temperature
Shear waves
wave excitation
silica glass
coefficients
Fused silica
coupling coefficients
S waves

ASJC Scopus subject areas

  • Acoustics and Ultrasonics
  • Public Health, Environmental and Occupational Health
  • Building and Construction
  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Automotive Engineering
  • Aerospace Engineering

Cite this

Yanagitani, T., Kiuch, M., Matsukawa, M., & Watanabe, Y. (2008). Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films. In Proceedings - European Conference on Noise Control (pp. 4987-4992)

Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films. / Yanagitani, Takahiko; Kiuch, M.; Matsukawa, M.; Watanabe, Y.

Proceedings - European Conference on Noise Control. 2008. p. 4987-4992.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yanagitani, T, Kiuch, M, Matsukawa, M & Watanabe, Y 2008, Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films. in Proceedings - European Conference on Noise Control. pp. 4987-4992, 7th European Conference on Noise Control 2008, EURONOISE 2008, Paris, France, 08/6/29.
Yanagitani T, Kiuch M, Matsukawa M, Watanabe Y. Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films. In Proceedings - European Conference on Noise Control. 2008. p. 4987-4992
Yanagitani, Takahiko ; Kiuch, M. ; Matsukawa, M. ; Watanabe, Y. / Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films. Proceedings - European Conference on Noise Control. 2008. pp. 4987-4992
@inproceedings{5163d159a2d54822a10db3069d464230,
title = "Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films",
abstract = "This paper presents pure-shear mode film bulk acoustic wave resonators (FBARs) based on the (112̄0) textured ZnO and AlN films. We have also introduced FBAR structure consisting of two layers of the (112̄0) textured ZnO film with opposite polarization directions. This FBAR structure operated in second overtone pureshear mode, and allowed shear-mode FBARs at higher frequency. For ZnO films, the effective electromechanical coupling coefficients κ eff 2 of pure-shear mode FBAR and second overtone pure-shear mode FBAR in this study were found to be 3.3{\%} and 0.8{\%}, respectively. The temperature coefficient of frequency (TCF) for three types of FBARs were measured in the temperature range of 10-60 °C. TCF values of -63.1 ppm/°C, -34.7 ppm/°C, and -35.6 ppm/°C were found for the thickness extensional mode FBAR, the pure-shear mode FBAR, and the second overtone pure-shear mode FBAR, respectively. These results demonstrated that pure-shear mode FBARs have more stable temperature characteristics than the conventional thickness extensional mode FBARs. For AlN films, we report the first synthesis of the (112̄0) textured AlN film on a silica glass substrate. Shear wave excitation in the GHz range was demonstrated using AlN high overtone bulk acoustic resonator (HBAR) structure.",
author = "Takahiko Yanagitani and M. Kiuch and M. Matsukawa and Y. Watanabe",
year = "2008",
language = "English",
pages = "4987--4992",
booktitle = "Proceedings - European Conference on Noise Control",

}

TY - GEN

T1 - Pure-shear mode BAW resonators consisting of (11-20)textured ZnO films

AU - Yanagitani, Takahiko

AU - Kiuch, M.

AU - Matsukawa, M.

AU - Watanabe, Y.

PY - 2008

Y1 - 2008

N2 - This paper presents pure-shear mode film bulk acoustic wave resonators (FBARs) based on the (112̄0) textured ZnO and AlN films. We have also introduced FBAR structure consisting of two layers of the (112̄0) textured ZnO film with opposite polarization directions. This FBAR structure operated in second overtone pureshear mode, and allowed shear-mode FBARs at higher frequency. For ZnO films, the effective electromechanical coupling coefficients κ eff 2 of pure-shear mode FBAR and second overtone pure-shear mode FBAR in this study were found to be 3.3% and 0.8%, respectively. The temperature coefficient of frequency (TCF) for three types of FBARs were measured in the temperature range of 10-60 °C. TCF values of -63.1 ppm/°C, -34.7 ppm/°C, and -35.6 ppm/°C were found for the thickness extensional mode FBAR, the pure-shear mode FBAR, and the second overtone pure-shear mode FBAR, respectively. These results demonstrated that pure-shear mode FBARs have more stable temperature characteristics than the conventional thickness extensional mode FBARs. For AlN films, we report the first synthesis of the (112̄0) textured AlN film on a silica glass substrate. Shear wave excitation in the GHz range was demonstrated using AlN high overtone bulk acoustic resonator (HBAR) structure.

AB - This paper presents pure-shear mode film bulk acoustic wave resonators (FBARs) based on the (112̄0) textured ZnO and AlN films. We have also introduced FBAR structure consisting of two layers of the (112̄0) textured ZnO film with opposite polarization directions. This FBAR structure operated in second overtone pureshear mode, and allowed shear-mode FBARs at higher frequency. For ZnO films, the effective electromechanical coupling coefficients κ eff 2 of pure-shear mode FBAR and second overtone pure-shear mode FBAR in this study were found to be 3.3% and 0.8%, respectively. The temperature coefficient of frequency (TCF) for three types of FBARs were measured in the temperature range of 10-60 °C. TCF values of -63.1 ppm/°C, -34.7 ppm/°C, and -35.6 ppm/°C were found for the thickness extensional mode FBAR, the pure-shear mode FBAR, and the second overtone pure-shear mode FBAR, respectively. These results demonstrated that pure-shear mode FBARs have more stable temperature characteristics than the conventional thickness extensional mode FBARs. For AlN films, we report the first synthesis of the (112̄0) textured AlN film on a silica glass substrate. Shear wave excitation in the GHz range was demonstrated using AlN high overtone bulk acoustic resonator (HBAR) structure.

UR - http://www.scopus.com/inward/record.url?scp=84874913065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874913065&partnerID=8YFLogxK

M3 - Conference contribution

SP - 4987

EP - 4992

BT - Proceedings - European Conference on Noise Control

ER -