Purity and minority carrier lifetime in silicon produced by direct electrolytic reduction of SiO2 in molten CaCl2

Ming Zhong, Kouji Yasuda, Takayuki Homma, Toshiyuki Nohira

    Research output: Contribution to journalArticle

    Abstract

    Si powder was produced by direct electrolytic reduction of SiO2 in molten CaCl2 at 1123 K. From the Si powder, Si ingots were obtained by a floating zone method. The concentrations of most metallic elements and of P in the Si ingots were lower than the acceptable levels for solar grade Si. The minority carrier lifetimes in the Si ingots were measured using a microwave photo conductivity decay method. The obtained values of ca. 1.0 μs were two orders of magnitude shorter than those observed in an Si ingot prepared from 10N purity Si.

    Original languageEnglish
    Pages (from-to)77-81
    Number of pages5
    JournalElectrochemistry
    Volume86
    Issue number2
    DOIs
    Publication statusPublished - 2018 Jan 1

    Fingerprint

    Electrolytic reduction
    Carrier lifetime
    Silicon
    Ingots
    Molten materials
    Powders
    Microwaves

    Keywords

    • Electrolysis
    • Molten Salt
    • Purity
    • Silicon

    ASJC Scopus subject areas

    • Electrochemistry

    Cite this

    Purity and minority carrier lifetime in silicon produced by direct electrolytic reduction of SiO2 in molten CaCl2 . / Zhong, Ming; Yasuda, Kouji; Homma, Takayuki; Nohira, Toshiyuki.

    In: Electrochemistry, Vol. 86, No. 2, 01.01.2018, p. 77-81.

    Research output: Contribution to journalArticle

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