Pursuit of single domain ZnTe layers on sapphire substrates

    Research output: Contribution to journalArticle

    Abstract

    ZnTe layers were grown on various orientation surfaces of sapphire substrates, namely c-, a-, r-, and S-planes. Single domain dominant layers were achieved by carefully controlling the substrate orientation and introducing the thin buffer layer. The substrate surfaces were annealed at approximately 1000 °C to achieve an atomically smooth surface with step-terrace structures. Single domain layers were achieved by employing the step-terrace structured substrates. A nanofacet structure of the substrate surface consisting of the r-plane and the S-plane was obtained by annealing the m-plane substrate surface. Nucleation of ZnTe occurred along the nanofacet. It was confirmed that preferential nucleation of ZnTe on the S-plane of the nanofacet took place. Nitrogen doping of the ZnTe layer was performed, with the doping efficiency confirmed as being as good as ZnTe layers prepared on GaAs substrates. This is another indication of the high crystal quality for the prepared ZnTe layer.

    Original languageEnglish
    Pages (from-to)189-193
    Number of pages5
    JournalJournal of Crystal Growth
    Volume512
    DOIs
    Publication statusPublished - 2019 Apr 15

    Fingerprint

    Aluminum Oxide
    Sapphire
    sapphire
    Substrates
    Nucleation
    Doping (additives)
    nucleation
    Buffer layers
    indication
    Nitrogen
    buffers
    Annealing
    nitrogen
    Crystals
    annealing
    crystals

    Keywords

    • A1. Crystal structure
    • A1. X-ray diffraction
    • A3. Molecular beam epitaxy
    • B1. Sapphire
    • B1. Zinc compounds

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

    Cite this

    Pursuit of single domain ZnTe layers on sapphire substrates. / Kobayashi, Masakazu.

    In: Journal of Crystal Growth, Vol. 512, 15.04.2019, p. 189-193.

    Research output: Contribution to journalArticle

    @article{d753910b57964fc7aaa944763389729c,
    title = "Pursuit of single domain ZnTe layers on sapphire substrates",
    abstract = "ZnTe layers were grown on various orientation surfaces of sapphire substrates, namely c-, a-, r-, and S-planes. Single domain dominant layers were achieved by carefully controlling the substrate orientation and introducing the thin buffer layer. The substrate surfaces were annealed at approximately 1000 °C to achieve an atomically smooth surface with step-terrace structures. Single domain layers were achieved by employing the step-terrace structured substrates. A nanofacet structure of the substrate surface consisting of the r-plane and the S-plane was obtained by annealing the m-plane substrate surface. Nucleation of ZnTe occurred along the nanofacet. It was confirmed that preferential nucleation of ZnTe on the S-plane of the nanofacet took place. Nitrogen doping of the ZnTe layer was performed, with the doping efficiency confirmed as being as good as ZnTe layers prepared on GaAs substrates. This is another indication of the high crystal quality for the prepared ZnTe layer.",
    keywords = "A1. Crystal structure, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Sapphire, B1. Zinc compounds",
    author = "Masakazu Kobayashi",
    year = "2019",
    month = "4",
    day = "15",
    doi = "10.1016/j.jcrysgro.2019.02.040",
    language = "English",
    volume = "512",
    pages = "189--193",
    journal = "Journal of Crystal Growth",
    issn = "0022-0248",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Pursuit of single domain ZnTe layers on sapphire substrates

    AU - Kobayashi, Masakazu

    PY - 2019/4/15

    Y1 - 2019/4/15

    N2 - ZnTe layers were grown on various orientation surfaces of sapphire substrates, namely c-, a-, r-, and S-planes. Single domain dominant layers were achieved by carefully controlling the substrate orientation and introducing the thin buffer layer. The substrate surfaces were annealed at approximately 1000 °C to achieve an atomically smooth surface with step-terrace structures. Single domain layers were achieved by employing the step-terrace structured substrates. A nanofacet structure of the substrate surface consisting of the r-plane and the S-plane was obtained by annealing the m-plane substrate surface. Nucleation of ZnTe occurred along the nanofacet. It was confirmed that preferential nucleation of ZnTe on the S-plane of the nanofacet took place. Nitrogen doping of the ZnTe layer was performed, with the doping efficiency confirmed as being as good as ZnTe layers prepared on GaAs substrates. This is another indication of the high crystal quality for the prepared ZnTe layer.

    AB - ZnTe layers were grown on various orientation surfaces of sapphire substrates, namely c-, a-, r-, and S-planes. Single domain dominant layers were achieved by carefully controlling the substrate orientation and introducing the thin buffer layer. The substrate surfaces were annealed at approximately 1000 °C to achieve an atomically smooth surface with step-terrace structures. Single domain layers were achieved by employing the step-terrace structured substrates. A nanofacet structure of the substrate surface consisting of the r-plane and the S-plane was obtained by annealing the m-plane substrate surface. Nucleation of ZnTe occurred along the nanofacet. It was confirmed that preferential nucleation of ZnTe on the S-plane of the nanofacet took place. Nitrogen doping of the ZnTe layer was performed, with the doping efficiency confirmed as being as good as ZnTe layers prepared on GaAs substrates. This is another indication of the high crystal quality for the prepared ZnTe layer.

    KW - A1. Crystal structure

    KW - A1. X-ray diffraction

    KW - A3. Molecular beam epitaxy

    KW - B1. Sapphire

    KW - B1. Zinc compounds

    UR - http://www.scopus.com/inward/record.url?scp=85061642652&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85061642652&partnerID=8YFLogxK

    U2 - 10.1016/j.jcrysgro.2019.02.040

    DO - 10.1016/j.jcrysgro.2019.02.040

    M3 - Article

    VL - 512

    SP - 189

    EP - 193

    JO - Journal of Crystal Growth

    JF - Journal of Crystal Growth

    SN - 0022-0248

    ER -