Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure

Koichi Hasebe; Tomonari Sato; Koji Takeda; Shigeru Kanazawa; Takuro Fujii; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ISLC.2014.160

Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure

Koichi Hasebe, Tomonari Sato, Koji Takeda, Shigeru Kanazawa, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	54-55
Number of pages	2
ISBN (Electronic)	9781479957217
DOIs	https://doi.org/10.1109/ISLC.2014.160
Publication status	Published - 2014 Dec 16
Externally published	Yes
Event	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 2014 Sept 7 → 2014 Sept 10

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/Territory	Spain
City	Palma de Mallorca
Period	14/9/7 → 14/9/10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2014.160

Cite this

Hasebe, K., Sato, T., Takeda, K., Kanazawa, S., Fujii, T., Kakitsuka, T., & Matsuo, S. (2014). Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 54-55). [6987447] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.160

Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure. / Hasebe, Koichi; Sato, Tomonari; Takeda, Koji et al.

Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 54-55 6987447 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasebe, K, Sato, T, Takeda, K, Kanazawa, S, Fujii, T, Kakitsuka, T & Matsuo, S 2014, Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987447, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 54-55, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 14/9/7. https://doi.org/10.1109/ISLC.2014.160

Hasebe K, Sato T, Takeda K, Kanazawa S, Fujii T, Kakitsuka T et al. Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure. In Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 54-55. 6987447. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2014.160

Hasebe, Koichi ; Sato, Tomonari ; Takeda, Koji et al. / Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure. Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 54-55 (Conference Digest - IEEE International Semiconductor Laser Conference).

@inproceedings{8bee01c977c1426796772a85efdfae1c,

title = "Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure",

abstract = "We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.",

author = "Koichi Hasebe and Tomonari Sato and Koji Takeda and Shigeru Kanazawa and Takuro Fujii and Takaaki Kakitsuka and Shinji Matsuo",

year = "2014",

month = dec,

day = "16",

doi = "10.1109/ISLC.2014.160",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "54--55",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

note = "2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",

}

TY - GEN

T1 - Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure

AU - Hasebe, Koichi

AU - Sato, Tomonari

AU - Takeda, Koji

AU - Kanazawa, Shigeru

AU - Fujii, Takuro

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2014/12/16

Y1 - 2014/12/16

N2 - We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.

AB - We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.

UR - http://www.scopus.com/inward/record.url?scp=84920173018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84920173018&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2014.160

DO - 10.1109/ISLC.2014.160

M3 - Conference contribution

AN - SCOPUS:84920173018

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 54

EP - 55

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014

Y2 - 7 September 2014 through 10 September 2014

ER -

Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure

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