P(VDF

TrFE).

Noriyoshi Yamauchi, Kinya Kato, Tsutomu Wada

Research output: Chapter in Book/Report/Conference proceedingChapter

14 Citations (Scopus)

Abstract

MIS capacitors with Al-SiO//2-P(VDF:TrFE)-SiO//2Si structure were fabricated depositing P(VDF:TrFE) film by a spin coating method to investigate properties of very thin ferroelectric polymer films. By sandwiching the polymer film with SiO//2 films, application of an electrical field high enough for ferroelectricity measurement in several tens nm thick P(VDF:TrFE) films became possible. It is revealed that P(VDF:TrFE) film as thin as 32nm shows ferroelectricity by high frequency C-V measurements of the capacitors.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages671-673
Number of pages3
Volume23
Edition9 pt 2
Publication statusPublished - 1984 Sep
Externally publishedYes

Fingerprint

Ferroelectricity
Polymer films
Capacitors
Ferroelectric films
Management information systems
Spin coating

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamauchi, N., Kato, K., & Wada, T. (1984). P(VDF: TrFE). In Japanese Journal of Applied Physics, Part 2: Letters (9 pt 2 ed., Vol. 23, pp. 671-673)

P(VDF : TrFE). / Yamauchi, Noriyoshi; Kato, Kinya; Wada, Tsutomu.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 23 9 pt 2. ed. 1984. p. 671-673.

Research output: Chapter in Book/Report/Conference proceedingChapter

Yamauchi, N, Kato, K & Wada, T 1984, P(VDF: TrFE). in Japanese Journal of Applied Physics, Part 2: Letters. 9 pt 2 edn, vol. 23, pp. 671-673.
Yamauchi N, Kato K, Wada T. P(VDF: TrFE). In Japanese Journal of Applied Physics, Part 2: Letters. 9 pt 2 ed. Vol. 23. 1984. p. 671-673
Yamauchi, Noriyoshi ; Kato, Kinya ; Wada, Tsutomu. / P(VDF : TrFE). Japanese Journal of Applied Physics, Part 2: Letters. Vol. 23 9 pt 2. ed. 1984. pp. 671-673
@inbook{727f422588e148378cd5ac4685244023,
title = "P(VDF: TrFE).",
abstract = "MIS capacitors with Al-SiO//2-P(VDF:TrFE)-SiO//2Si structure were fabricated depositing P(VDF:TrFE) film by a spin coating method to investigate properties of very thin ferroelectric polymer films. By sandwiching the polymer film with SiO//2 films, application of an electrical field high enough for ferroelectricity measurement in several tens nm thick P(VDF:TrFE) films became possible. It is revealed that P(VDF:TrFE) film as thin as 32nm shows ferroelectricity by high frequency C-V measurements of the capacitors.",
author = "Noriyoshi Yamauchi and Kinya Kato and Tsutomu Wada",
year = "1984",
month = "9",
language = "English",
volume = "23",
pages = "671--673",
booktitle = "Japanese Journal of Applied Physics, Part 2: Letters",
edition = "9 pt 2",

}

TY - CHAP

T1 - P(VDF

T2 - TrFE).

AU - Yamauchi, Noriyoshi

AU - Kato, Kinya

AU - Wada, Tsutomu

PY - 1984/9

Y1 - 1984/9

N2 - MIS capacitors with Al-SiO//2-P(VDF:TrFE)-SiO//2Si structure were fabricated depositing P(VDF:TrFE) film by a spin coating method to investigate properties of very thin ferroelectric polymer films. By sandwiching the polymer film with SiO//2 films, application of an electrical field high enough for ferroelectricity measurement in several tens nm thick P(VDF:TrFE) films became possible. It is revealed that P(VDF:TrFE) film as thin as 32nm shows ferroelectricity by high frequency C-V measurements of the capacitors.

AB - MIS capacitors with Al-SiO//2-P(VDF:TrFE)-SiO//2Si structure were fabricated depositing P(VDF:TrFE) film by a spin coating method to investigate properties of very thin ferroelectric polymer films. By sandwiching the polymer film with SiO//2 films, application of an electrical field high enough for ferroelectricity measurement in several tens nm thick P(VDF:TrFE) films became possible. It is revealed that P(VDF:TrFE) film as thin as 32nm shows ferroelectricity by high frequency C-V measurements of the capacitors.

UR - http://www.scopus.com/inward/record.url?scp=0021484256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021484256&partnerID=8YFLogxK

M3 - Chapter

VL - 23

SP - 671

EP - 673

BT - Japanese Journal of Applied Physics, Part 2: Letters

ER -