MIS capacitors with Al-SiO//2-P(VDF:TrFE)-SiO//2Si structure were fabricated depositing P(VDF:TrFE) film by a spin coating method to investigate properties of very thin ferroelectric polymer films. By sandwiching the polymer film with SiO//2 films, application of an electrical field high enough for ferroelectricity measurement in several tens nm thick P(VDF:TrFE) films became possible. It is revealed that P(VDF:TrFE) film as thin as 32nm shows ferroelectricity by high frequency C-V measurements of the capacitors.
|Title of host publication||Japanese Journal of Applied Physics, Part 2: Letters|
|Number of pages||3|
|Edition||9 pt 2|
|Publication status||Published - 1984 Sep|
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