Pyrolytic preparation of gallium nitride from [Ga(NEt 2) 3] 2 and its ammonolysis compound

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Gallium nitride (GaN) was prepared by the pyrolytic conversion of both [Ga(NEt 2) 3] 2 and its ammonolysis product at 600°C for 4 h under Ar. The pyrolyzed residues were analyzed by X-ray powder diffraction and scanning electron microscopy, and the pyrolysis processes of the precursors under He were investigated by thermogravimetry-mass spectrometry. The XRD pattern of the pyrolyzed residue of [Ga(NEt 2) 3] 2 showed well-resolved peaks due to a mixture of cubic and hexagonal close-packed layers of GaN. The broad XRD pattern of the pyrolyzed residue of the ammonolysis product was also attributed to the mixture of cubic and hexagonal close-packed layers of GaN. For the pyrolysis of [Ga(NEt 2) 3] 2, the evolution of hydrocarbons was extensively observed at relatively high temperature, but a large amount of carbon (11 mass%) was still detected in the pyrolyzed residue. On the other hand, the amount of carbon was only 1.1 mass% in the pyrolyzed residue of the ammonolysis product. The pyrolysis results of the ammonolysis product under Ar were very similar to those of [Ga(NEt 2) 3] 2 under NH3.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium - Proceedings
    EditorsC.R. Abernathy, H. Amano, J.C. Zolper
    PublisherMaterials Research Society
    Pages93-98
    Number of pages6
    Volume468
    Publication statusPublished - 1997
    EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
    Duration: 1997 Apr 11997 Apr 4

    Other

    OtherProceedings of the 1997 MRS Spring Symposium
    CitySan Francisco, CA, USA
    Period97/4/197/4/4

    Fingerprint

    Gallium nitride
    Pyrolysis
    Carbon
    Hydrocarbons
    X ray powder diffraction
    Mass spectrometry
    Thermogravimetric analysis
    Scanning electron microscopy
    gallium nitride
    Temperature

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Koyama, S., Sugahara, Y., & Kuroda, K. (1997). Pyrolytic preparation of gallium nitride from [Ga(NEt 2) 3] 2 and its ammonolysis compound In C. R. Abernathy, H. Amano, & J. C. Zolper (Eds.), Materials Research Society Symposium - Proceedings (Vol. 468, pp. 93-98). Materials Research Society.

    Pyrolytic preparation of gallium nitride from [Ga(NEt 2) 3] 2 and its ammonolysis compound . / Koyama, S.; Sugahara, Yoshiyuki; Kuroda, Kazuyuki.

    Materials Research Society Symposium - Proceedings. ed. / C.R. Abernathy; H. Amano; J.C. Zolper. Vol. 468 Materials Research Society, 1997. p. 93-98.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Koyama, S, Sugahara, Y & Kuroda, K 1997, Pyrolytic preparation of gallium nitride from [Ga(NEt 2) 3] 2 and its ammonolysis compound in CR Abernathy, H Amano & JC Zolper (eds), Materials Research Society Symposium - Proceedings. vol. 468, Materials Research Society, pp. 93-98, Proceedings of the 1997 MRS Spring Symposium, San Francisco, CA, USA, 97/4/1.
    Koyama S, Sugahara Y, Kuroda K. Pyrolytic preparation of gallium nitride from [Ga(NEt 2) 3] 2 and its ammonolysis compound In Abernathy CR, Amano H, Zolper JC, editors, Materials Research Society Symposium - Proceedings. Vol. 468. Materials Research Society. 1997. p. 93-98
    Koyama, S. ; Sugahara, Yoshiyuki ; Kuroda, Kazuyuki. / Pyrolytic preparation of gallium nitride from [Ga(NEt 2) 3] 2 and its ammonolysis compound Materials Research Society Symposium - Proceedings. editor / C.R. Abernathy ; H. Amano ; J.C. Zolper. Vol. 468 Materials Research Society, 1997. pp. 93-98
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    abstract = "Gallium nitride (GaN) was prepared by the pyrolytic conversion of both [Ga(NEt 2) 3] 2 and its ammonolysis product at 600°C for 4 h under Ar. The pyrolyzed residues were analyzed by X-ray powder diffraction and scanning electron microscopy, and the pyrolysis processes of the precursors under He were investigated by thermogravimetry-mass spectrometry. The XRD pattern of the pyrolyzed residue of [Ga(NEt 2) 3] 2 showed well-resolved peaks due to a mixture of cubic and hexagonal close-packed layers of GaN. The broad XRD pattern of the pyrolyzed residue of the ammonolysis product was also attributed to the mixture of cubic and hexagonal close-packed layers of GaN. For the pyrolysis of [Ga(NEt 2) 3] 2, the evolution of hydrocarbons was extensively observed at relatively high temperature, but a large amount of carbon (11 mass{\%}) was still detected in the pyrolyzed residue. On the other hand, the amount of carbon was only 1.1 mass{\%} in the pyrolyzed residue of the ammonolysis product. The pyrolysis results of the ammonolysis product under Ar were very similar to those of [Ga(NEt 2) 3] 2 under NH3.",
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    AB - Gallium nitride (GaN) was prepared by the pyrolytic conversion of both [Ga(NEt 2) 3] 2 and its ammonolysis product at 600°C for 4 h under Ar. The pyrolyzed residues were analyzed by X-ray powder diffraction and scanning electron microscopy, and the pyrolysis processes of the precursors under He were investigated by thermogravimetry-mass spectrometry. The XRD pattern of the pyrolyzed residue of [Ga(NEt 2) 3] 2 showed well-resolved peaks due to a mixture of cubic and hexagonal close-packed layers of GaN. The broad XRD pattern of the pyrolyzed residue of the ammonolysis product was also attributed to the mixture of cubic and hexagonal close-packed layers of GaN. For the pyrolysis of [Ga(NEt 2) 3] 2, the evolution of hydrocarbons was extensively observed at relatively high temperature, but a large amount of carbon (11 mass%) was still detected in the pyrolyzed residue. On the other hand, the amount of carbon was only 1.1 mass% in the pyrolyzed residue of the ammonolysis product. The pyrolysis results of the ammonolysis product under Ar were very similar to those of [Ga(NEt 2) 3] 2 under NH3.

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