Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

T. Ohnishi, B. T. Hang, X. Xu, M. Osada, K. Takada

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Thin films of c-axis-oriented LiCoO2were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatlyaffect the crystal quality of the epitaxial LiCoO2thin films. In addition, high-quality LiCoO2thin films were found to grow without any impurity phases under relatively low oxygen partial pressure,although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity.This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.

Original languageEnglish
Pages (from-to)1886-1889
Number of pages4
JournalJournal of Materials Research
Volume25
Issue number10
DOIs
Publication statusPublished - 2010 Oct
Externally publishedYes

Fingerprint

Epitaxial films
Laser ablation
Pulsed laser deposition
quality control
pulsed laser deposition
Quality control
Impurities
Thin films
laser ablation
thin films
Partial pressure
complex compounds
impurities
Oxygen
Crystals
partial pressure
Chemical analysis
valence
oxygen
crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics

Cite this

Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition. / Ohnishi, T.; Hang, B. T.; Xu, X.; Osada, M.; Takada, K.

In: Journal of Materials Research, Vol. 25, No. 10, 10.2010, p. 1886-1889.

Research output: Contribution to journalArticle

Ohnishi, T. ; Hang, B. T. ; Xu, X. ; Osada, M. ; Takada, K. / Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition. In: Journal of Materials Research. 2010 ; Vol. 25, No. 10. pp. 1886-1889.
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