Quality of a-Si: H/Si3N4 multilayer films fabricated by double tubed coaxial line type MPCVD system and application of the films to optical circuit element

Isamu Kato, Masahiko Sagisaka, Takayoshi Sugai, Takeshi Kamigaichi

Research output: Contribution to journalArticle


The object of this research was the fabrication of high-quality a-Si:H/Si3N4 multilayer films with ultrathin multilayered configurations to serve as a new photonic material, as well as the evaluation of the film quality and applications to photonics. The authors have succeeded in controlling the thickness of the multilayer film at subnanometer order as indicated by the X-ray diffraction peak of the a-Si:H/Si3N4 multilayer film. The theoretical curve and the experimental results for the optical energy band gap agree well for multilayer films fabricated by varying the thickness of the a-Si:H layer while the thickness of the Si3N4 layer is kept constant, and hence excellent multilayer films are obtained. These multilayer films are applied to optical waveguides. The optical waveguide with an ultrathin multilayer structure, much thinner than the wavelength λ of the guided light, is expected to exhibit an anomalous propagation characteristic. It is found that the TM mode is transmitted while the TE mode is cut off in the present multilayer slab waveguide.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number12
Publication statusPublished - 2001 Dec



  • Microwave plasma CVD
  • Multilayer film
  • Optical energy band gap
  • Optical waveguide
  • TM mode transmission type optical component

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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