Quality of a-Si: H/Si3N4 multilayer films fabricated by double tubed coaxial line type MPCVD system and application of the films to optical circuit element

Isamu Kato, Masahiko Sagisaka, Takayoshi Sugai, Takeshi Kamigaichi

Research output: Contribution to journalArticle

Abstract

The object of this research was the fabrication of high-quality a-Si:H/Si3N4 multilayer films with ultrathin multilayered configurations to serve as a new photonic material, as well as the evaluation of the film quality and applications to photonics. The authors have succeeded in controlling the thickness of the multilayer film at subnanometer order as indicated by the X-ray diffraction peak of the a-Si:H/Si3N4 multilayer film. The theoretical curve and the experimental results for the optical energy band gap agree well for multilayer films fabricated by varying the thickness of the a-Si:H layer while the thickness of the Si3N4 layer is kept constant, and hence excellent multilayer films are obtained. These multilayer films are applied to optical waveguides. The optical waveguide with an ultrathin multilayer structure, much thinner than the wavelength λ of the guided light, is expected to exhibit an anomalous propagation characteristic. It is found that the TM mode is transmitted while the TE mode is cut off in the present multilayer slab waveguide.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume84
Issue number12
DOIs
Publication statusPublished - 2001 Dec

Fingerprint

Multilayer films
Networks (circuits)
Optical waveguides
Photonics
Multilayers
optical waveguides
photonics
Band structure
Energy gap
Waveguides
laminates
energy bands
slabs
cut-off
Fabrication
X ray diffraction
Wavelength
waveguides
fabrication
propagation

Keywords

  • Microwave plasma CVD
  • Multilayer film
  • Optical energy band gap
  • Optical waveguide
  • TM mode transmission type optical component

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

@article{c862481df7c04d6c846c3a4e99b920d4,
title = "Quality of a-Si: H/Si3N4 multilayer films fabricated by double tubed coaxial line type MPCVD system and application of the films to optical circuit element",
abstract = "The object of this research was the fabrication of high-quality a-Si:H/Si3N4 multilayer films with ultrathin multilayered configurations to serve as a new photonic material, as well as the evaluation of the film quality and applications to photonics. The authors have succeeded in controlling the thickness of the multilayer film at subnanometer order as indicated by the X-ray diffraction peak of the a-Si:H/Si3N4 multilayer film. The theoretical curve and the experimental results for the optical energy band gap agree well for multilayer films fabricated by varying the thickness of the a-Si:H layer while the thickness of the Si3N4 layer is kept constant, and hence excellent multilayer films are obtained. These multilayer films are applied to optical waveguides. The optical waveguide with an ultrathin multilayer structure, much thinner than the wavelength λ of the guided light, is expected to exhibit an anomalous propagation characteristic. It is found that the TM mode is transmitted while the TE mode is cut off in the present multilayer slab waveguide.",
keywords = "Microwave plasma CVD, Multilayer film, Optical energy band gap, Optical waveguide, TM mode transmission type optical component",
author = "Isamu Kato and Masahiko Sagisaka and Takayoshi Sugai and Takeshi Kamigaichi",
year = "2001",
month = "12",
doi = "10.1002/ecjb.1074",
language = "English",
volume = "84",
pages = "1--7",
journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",
issn = "8756-663X",
publisher = "Scripta Technica",
number = "12",

}

TY - JOUR

T1 - Quality of a-Si

T2 - H/Si3N4 multilayer films fabricated by double tubed coaxial line type MPCVD system and application of the films to optical circuit element

AU - Kato, Isamu

AU - Sagisaka, Masahiko

AU - Sugai, Takayoshi

AU - Kamigaichi, Takeshi

PY - 2001/12

Y1 - 2001/12

N2 - The object of this research was the fabrication of high-quality a-Si:H/Si3N4 multilayer films with ultrathin multilayered configurations to serve as a new photonic material, as well as the evaluation of the film quality and applications to photonics. The authors have succeeded in controlling the thickness of the multilayer film at subnanometer order as indicated by the X-ray diffraction peak of the a-Si:H/Si3N4 multilayer film. The theoretical curve and the experimental results for the optical energy band gap agree well for multilayer films fabricated by varying the thickness of the a-Si:H layer while the thickness of the Si3N4 layer is kept constant, and hence excellent multilayer films are obtained. These multilayer films are applied to optical waveguides. The optical waveguide with an ultrathin multilayer structure, much thinner than the wavelength λ of the guided light, is expected to exhibit an anomalous propagation characteristic. It is found that the TM mode is transmitted while the TE mode is cut off in the present multilayer slab waveguide.

AB - The object of this research was the fabrication of high-quality a-Si:H/Si3N4 multilayer films with ultrathin multilayered configurations to serve as a new photonic material, as well as the evaluation of the film quality and applications to photonics. The authors have succeeded in controlling the thickness of the multilayer film at subnanometer order as indicated by the X-ray diffraction peak of the a-Si:H/Si3N4 multilayer film. The theoretical curve and the experimental results for the optical energy band gap agree well for multilayer films fabricated by varying the thickness of the a-Si:H layer while the thickness of the Si3N4 layer is kept constant, and hence excellent multilayer films are obtained. These multilayer films are applied to optical waveguides. The optical waveguide with an ultrathin multilayer structure, much thinner than the wavelength λ of the guided light, is expected to exhibit an anomalous propagation characteristic. It is found that the TM mode is transmitted while the TE mode is cut off in the present multilayer slab waveguide.

KW - Microwave plasma CVD

KW - Multilayer film

KW - Optical energy band gap

KW - Optical waveguide

KW - TM mode transmission type optical component

UR - http://www.scopus.com/inward/record.url?scp=0035696185&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035696185&partnerID=8YFLogxK

U2 - 10.1002/ecjb.1074

DO - 10.1002/ecjb.1074

M3 - Article

AN - SCOPUS:0035696185

VL - 84

SP - 1

EP - 7

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

SN - 8756-663X

IS - 12

ER -