Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations

C. Krautschik, M. Ito, I. Nishiyama, Tatsuya Mori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

According to the International Technology Roadmap (ITRS) EUV exposure tools are expected to support both logic and memory manufacturing for the 70 nm node and beyond. In order to meet the CD control and overlay requirements at the expected tolerance levels for high volume manufacturing, tool performance from ideal need to be assessed and quantified. The impact of lens aberrations and flare to the aerial image at the system level were studied for three different technology nodes of interest: 70, 50, and 35 nm. This was done by computing the electric field at the mask level by making use of a rigorous mask simulator based on the differential method. The subsequent aerial image was then computed by using a standard scalar imaging model. The effects on critical dimensions (CDs) through focus as well as overlay were investigated in order to arrive at a tolerance level for lens aberration and flare contribution at the system level. It is shown that isolated line CD control requirements set an upper limit on the overall imaging performance while for overlay both feature types seem to play a similar role that defines the tolerance limit. Mandating a 10% CD control range leads to a 30 milli Wave (RMS) aberration requirement. This conclusion was reached by analyzing the response of each of 37 Zernike coefficients separately for both isolated and nested lines. Employing two separate sets of KrF PMI data that were scaled to a range of RMS values seemed to further reinforce the previous aberration tolerancing conclusion. A separate but similar flare analysis indicates that cross field flare variations need to be controlled to within 2% to meet CD control requirements that are consistent with ITRS roadmap.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsE.A. Dobisz
Pages524-534
Number of pages11
Volume4343
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventEmerging Lithographic Technologies V - Santa Clara, CA, United States
Duration: 2001 Feb 272001 Mar 1

Other

OtherEmerging Lithographic Technologies V
CountryUnited States
CitySanta Clara, CA
Period01/2/2701/3/1

Fingerprint

Aberrations
flares
Antennas
aberration
Imaging techniques
requirements
Masks
Lenses
simulation
masks
manufacturing
lenses
trajectory control
Simulators
Electric fields
simulators
logic
Data storage equipment
scalars
electric fields

Keywords

  • CD control
  • ITRS Roadmap
  • Lens aberrations
  • Lens flare
  • Static lens distortion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Krautschik, C., Ito, M., Nishiyama, I., & Mori, T. (2001). Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations. In E. A. Dobisz (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4343, pp. 524-534) https://doi.org/10.1117/12.436684

Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations. / Krautschik, C.; Ito, M.; Nishiyama, I.; Mori, Tatsuya.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / E.A. Dobisz. Vol. 4343 2001. p. 524-534.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krautschik, C, Ito, M, Nishiyama, I & Mori, T 2001, Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations. in EA Dobisz (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4343, pp. 524-534, Emerging Lithographic Technologies V, Santa Clara, CA, United States, 01/2/27. https://doi.org/10.1117/12.436684
Krautschik C, Ito M, Nishiyama I, Mori T. Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations. In Dobisz EA, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4343. 2001. p. 524-534 https://doi.org/10.1117/12.436684
Krautschik, C. ; Ito, M. ; Nishiyama, I. ; Mori, Tatsuya. / Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations. Proceedings of SPIE - The International Society for Optical Engineering. editor / E.A. Dobisz. Vol. 4343 2001. pp. 524-534
@inproceedings{44e0e7e6df654081a4feced53dce6017,
title = "Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations",
abstract = "According to the International Technology Roadmap (ITRS) EUV exposure tools are expected to support both logic and memory manufacturing for the 70 nm node and beyond. In order to meet the CD control and overlay requirements at the expected tolerance levels for high volume manufacturing, tool performance from ideal need to be assessed and quantified. The impact of lens aberrations and flare to the aerial image at the system level were studied for three different technology nodes of interest: 70, 50, and 35 nm. This was done by computing the electric field at the mask level by making use of a rigorous mask simulator based on the differential method. The subsequent aerial image was then computed by using a standard scalar imaging model. The effects on critical dimensions (CDs) through focus as well as overlay were investigated in order to arrive at a tolerance level for lens aberration and flare contribution at the system level. It is shown that isolated line CD control requirements set an upper limit on the overall imaging performance while for overlay both feature types seem to play a similar role that defines the tolerance limit. Mandating a 10{\%} CD control range leads to a 30 milli Wave (RMS) aberration requirement. This conclusion was reached by analyzing the response of each of 37 Zernike coefficients separately for both isolated and nested lines. Employing two separate sets of KrF PMI data that were scaled to a range of RMS values seemed to further reinforce the previous aberration tolerancing conclusion. A separate but similar flare analysis indicates that cross field flare variations need to be controlled to within 2{\%} to meet CD control requirements that are consistent with ITRS roadmap.",
keywords = "CD control, ITRS Roadmap, Lens aberrations, Lens flare, Static lens distortion",
author = "C. Krautschik and M. Ito and I. Nishiyama and Tatsuya Mori",
year = "2001",
doi = "10.1117/12.436684",
language = "English",
volume = "4343",
pages = "524--534",
editor = "E.A. Dobisz",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations

AU - Krautschik, C.

AU - Ito, M.

AU - Nishiyama, I.

AU - Mori, Tatsuya

PY - 2001

Y1 - 2001

N2 - According to the International Technology Roadmap (ITRS) EUV exposure tools are expected to support both logic and memory manufacturing for the 70 nm node and beyond. In order to meet the CD control and overlay requirements at the expected tolerance levels for high volume manufacturing, tool performance from ideal need to be assessed and quantified. The impact of lens aberrations and flare to the aerial image at the system level were studied for three different technology nodes of interest: 70, 50, and 35 nm. This was done by computing the electric field at the mask level by making use of a rigorous mask simulator based on the differential method. The subsequent aerial image was then computed by using a standard scalar imaging model. The effects on critical dimensions (CDs) through focus as well as overlay were investigated in order to arrive at a tolerance level for lens aberration and flare contribution at the system level. It is shown that isolated line CD control requirements set an upper limit on the overall imaging performance while for overlay both feature types seem to play a similar role that defines the tolerance limit. Mandating a 10% CD control range leads to a 30 milli Wave (RMS) aberration requirement. This conclusion was reached by analyzing the response of each of 37 Zernike coefficients separately for both isolated and nested lines. Employing two separate sets of KrF PMI data that were scaled to a range of RMS values seemed to further reinforce the previous aberration tolerancing conclusion. A separate but similar flare analysis indicates that cross field flare variations need to be controlled to within 2% to meet CD control requirements that are consistent with ITRS roadmap.

AB - According to the International Technology Roadmap (ITRS) EUV exposure tools are expected to support both logic and memory manufacturing for the 70 nm node and beyond. In order to meet the CD control and overlay requirements at the expected tolerance levels for high volume manufacturing, tool performance from ideal need to be assessed and quantified. The impact of lens aberrations and flare to the aerial image at the system level were studied for three different technology nodes of interest: 70, 50, and 35 nm. This was done by computing the electric field at the mask level by making use of a rigorous mask simulator based on the differential method. The subsequent aerial image was then computed by using a standard scalar imaging model. The effects on critical dimensions (CDs) through focus as well as overlay were investigated in order to arrive at a tolerance level for lens aberration and flare contribution at the system level. It is shown that isolated line CD control requirements set an upper limit on the overall imaging performance while for overlay both feature types seem to play a similar role that defines the tolerance limit. Mandating a 10% CD control range leads to a 30 milli Wave (RMS) aberration requirement. This conclusion was reached by analyzing the response of each of 37 Zernike coefficients separately for both isolated and nested lines. Employing two separate sets of KrF PMI data that were scaled to a range of RMS values seemed to further reinforce the previous aberration tolerancing conclusion. A separate but similar flare analysis indicates that cross field flare variations need to be controlled to within 2% to meet CD control requirements that are consistent with ITRS roadmap.

KW - CD control

KW - ITRS Roadmap

KW - Lens aberrations

KW - Lens flare

KW - Static lens distortion

UR - http://www.scopus.com/inward/record.url?scp=0034757240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034757240&partnerID=8YFLogxK

U2 - 10.1117/12.436684

DO - 10.1117/12.436684

M3 - Conference contribution

VL - 4343

SP - 524

EP - 534

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Dobisz, E.A.

ER -