Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

    Original languageEnglish
    Pages (from-to)1552-1554
    Number of pages3
    JournalApplied Physics Letters
    Volume68
    Issue number11
    DOIs
    Publication statusPublished - 1996

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    ion irradiation
    quantitative analysis
    defects
    radiation
    ions
    oxides
    threshold voltage
    field effect transistors
    trapping
    dosage
    shift

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation. / Koh, Meishoku; Shigeta, Bungo; Igarashi, Kai; Matsukawa, Takashi; Tanii, Takashi; Mori, Shigetaka; Ohdomari, Iwao.

    In: Applied Physics Letters, Vol. 68, No. 11, 1996, p. 1552-1554.

    Research output: Contribution to journalArticle

    Koh, Meishoku ; Shigeta, Bungo ; Igarashi, Kai ; Matsukawa, Takashi ; Tanii, Takashi ; Mori, Shigetaka ; Ohdomari, Iwao. / Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation. In: Applied Physics Letters. 1996 ; Vol. 68, No. 11. pp. 1552-1554.
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    AU - Mori, Shigetaka

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