Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

Research output: Contribution to journalArticle


Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995 Dec 1


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this