Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

    Research output: Contribution to journalArticle

    Abstract

    Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

    Original languageEnglish
    Pages (from-to)1552
    Number of pages1
    JournalApplied Physics Letters
    Publication statusPublished - 1995

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    ion irradiation
    quantitative analysis
    defects
    radiation
    ions
    oxides
    threshold voltage
    field effect transistors
    trapping
    dosage
    shift

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation. / Koh, Meishoku; Shigeta, Bungo; Igarashi, Kai; Matsukawa, Takashi; Tanii, Takashi; Mori, Shigetaka; Ohdomari, Iwao.

    In: Applied Physics Letters, 1995, p. 1552.

    Research output: Contribution to journalArticle

    Koh, Meishoku ; Shigeta, Bungo ; Igarashi, Kai ; Matsukawa, Takashi ; Tanii, Takashi ; Mori, Shigetaka ; Ohdomari, Iwao. / Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation. In: Applied Physics Letters. 1995 ; pp. 1552.
    @article{4bf54c43495d4efca5993e2b60edbf33,
    title = "Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation",
    abstract = "Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100{\%} at the ion dose below 1 ions/ μm2.",
    author = "Meishoku Koh and Bungo Shigeta and Kai Igarashi and Takashi Matsukawa and Takashi Tanii and Shigetaka Mori and Iwao Ohdomari",
    year = "1995",
    language = "English",
    pages = "1552",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",

    }

    TY - JOUR

    T1 - Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

    AU - Koh, Meishoku

    AU - Shigeta, Bungo

    AU - Igarashi, Kai

    AU - Matsukawa, Takashi

    AU - Tanii, Takashi

    AU - Mori, Shigetaka

    AU - Ohdomari, Iwao

    PY - 1995

    Y1 - 1995

    N2 - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

    AB - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

    UR - http://www.scopus.com/inward/record.url?scp=36449004687&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=36449004687&partnerID=8YFLogxK

    M3 - Article

    SP - 1552

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    ER -