c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.