Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.

Original languageEnglish
Title of host publicationIEEE International Ultrasonics Symposium, IUS
Pages2317-2320
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
Duration: 2011 Oct 182011 Oct 21

Other

Other2011 IEEE International Ultrasonics Symposium, IUS 2011
CountryUnited States
CityOrlando, FL
Period11/10/1811/10/21

Fingerprint

energetic particles
quantitative analysis
bombardment
textures
ions
anodes
ion irradiation
gas pressure
erosion
magnetron sputtering
low pressure
sputtering
shear
energy

Keywords

  • ion bombardment
  • ion energy distribution
  • piezoelectric film
  • RF magnetron sputtering
  • shear mode device

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Takayanagi, S., Yanagitani, T., Matsukawa, M., & Watanabe, Y. (2011). Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films. In IEEE International Ultrasonics Symposium, IUS (pp. 2317-2320). [6293444] https://doi.org/10.1109/ULTSYM.2011.0575

Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films. / Takayanagi, Shinji; Yanagitani, Takahiko; Matsukawa, Mami; Watanabe, Yoshiaki.

IEEE International Ultrasonics Symposium, IUS. 2011. p. 2317-2320 6293444.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takayanagi, S, Yanagitani, T, Matsukawa, M & Watanabe, Y 2011, Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films. in IEEE International Ultrasonics Symposium, IUS., 6293444, pp. 2317-2320, 2011 IEEE International Ultrasonics Symposium, IUS 2011, Orlando, FL, United States, 11/10/18. https://doi.org/10.1109/ULTSYM.2011.0575
Takayanagi, Shinji ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki. / Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films. IEEE International Ultrasonics Symposium, IUS. 2011. pp. 2317-2320
@inproceedings{6de9d2cf4a024938828620a55f7a967e,
title = "Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films",
abstract = "c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.",
keywords = "ion bombardment, ion energy distribution, piezoelectric film, RF magnetron sputtering, shear mode device",
author = "Shinji Takayanagi and Takahiko Yanagitani and Mami Matsukawa and Yoshiaki Watanabe",
year = "2011",
doi = "10.1109/ULTSYM.2011.0575",
language = "English",
isbn = "9781457712531",
pages = "2317--2320",
booktitle = "IEEE International Ultrasonics Symposium, IUS",

}

TY - GEN

T1 - Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films

AU - Takayanagi, Shinji

AU - Yanagitani, Takahiko

AU - Matsukawa, Mami

AU - Watanabe, Yoshiaki

PY - 2011

Y1 - 2011

N2 - c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.

AB - c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.

KW - ion bombardment

KW - ion energy distribution

KW - piezoelectric film

KW - RF magnetron sputtering

KW - shear mode device

UR - http://www.scopus.com/inward/record.url?scp=84869074762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869074762&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2011.0575

DO - 10.1109/ULTSYM.2011.0575

M3 - Conference contribution

AN - SCOPUS:84869074762

SN - 9781457712531

SP - 2317

EP - 2320

BT - IEEE International Ultrasonics Symposium, IUS

ER -