Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

Meishoku Koh; Katsuyuki Horita; Bungo Shigeta; Kai Igarashi; Takashi Matsukawa; Takashi Tanii; Shigetaka Mori; Iwao Ohdomari

doi:10.1063/1.116076

Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

Meishoku Koh^*, Katsuyuki Horita, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.

Original language	English
Pages (from-to)	3467-3469
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	24
DOIs	https://doi.org/10.1063/1.116076
Publication status	Published - 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.116076

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@article{9dfd0788523848c5b398eed6dcae84ff,

title = "Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe",

abstract = "Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.",

author = "Meishoku Koh and Katsuyuki Horita and Bungo Shigeta and Kai Igarashi and Takashi Matsukawa and Takashi Tanii and Shigetaka Mori and Iwao Ohdomari",

year = "1996",

doi = "10.1063/1.116076",

language = "English",

volume = "68",

pages = "3467--3469",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

AU - Koh, Meishoku

AU - Horita, Katsuyuki

AU - Shigeta, Bungo

AU - Igarashi, Kai

AU - Matsukawa, Takashi

AU - Tanii, Takashi

AU - Mori, Shigetaka

AU - Ohdomari, Iwao

PY - 1996

Y1 - 1996

N2 - Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.

AB - Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.

UR - http://www.scopus.com/inward/record.url?scp=0041803085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041803085&partnerID=8YFLogxK

U2 - 10.1063/1.116076

DO - 10.1063/1.116076

M3 - Article

AN - SCOPUS:0041803085

SN - 0003-6951

VL - 68

SP - 3467

EP - 3469

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

Abstract

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