Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

Meishoku Koh, Katsuyuki Horita, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.

    Original languageEnglish
    Pages (from-to)3467-3469
    Number of pages3
    JournalApplied Physics Letters
    Volume68
    Issue number24
    DOIs
    Publication statusPublished - 1996

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    ion irradiation
    metal oxide semiconductors
    field effect transistors
    leakage
    ions
    threshold voltage
    ion beams
    causes
    electric potential

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe. / Koh, Meishoku; Horita, Katsuyuki; Shigeta, Bungo; Igarashi, Kai; Matsukawa, Takashi; Tanii, Takashi; Mori, Shigetaka; Ohdomari, Iwao.

    In: Applied Physics Letters, Vol. 68, No. 24, 1996, p. 3467-3469.

    Research output: Contribution to journalArticle

    Koh, Meishoku ; Horita, Katsuyuki ; Shigeta, Bungo ; Igarashi, Kai ; Matsukawa, Takashi ; Tanii, Takashi ; Mori, Shigetaka ; Ohdomari, Iwao. / Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe. In: Applied Physics Letters. 1996 ; Vol. 68, No. 24. pp. 3467-3469.
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    abstract = "Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.",
    author = "Meishoku Koh and Katsuyuki Horita and Bungo Shigeta and Kai Igarashi and Takashi Matsukawa and Takashi Tanii and Shigetaka Mori and Iwao Ohdomari",
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    AU - Koh, Meishoku

    AU - Horita, Katsuyuki

    AU - Shigeta, Bungo

    AU - Igarashi, Kai

    AU - Matsukawa, Takashi

    AU - Tanii, Takashi

    AU - Mori, Shigetaka

    AU - Ohdomari, Iwao

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    AB - Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.

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