Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Volume1562
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2013 Apr 12013 Apr 5

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

Keywords

  • Memory
  • Nanoscale
  • Oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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    Tsuruoka, T., Hasegawa, T., Terabe, K., & Aono, M. (2013). Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch. In Materials Research Society Symposium Proceedings (Vol. 1562). Materials Research Society. https://doi.org/10.1557/opl.2013.725