Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Volume1562
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2013 Apr 12013 Apr 5

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

Fingerprint

switches
Switches
Point contacts
Bias voltage
Oxides
synapses
Electrodes
Electric potential
electric potential
pulses
intervals
electrodes
oxides

Keywords

  • Memory
  • Nanoscale
  • Oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Tsuruoka, T., Hasegawa, T., Terabe, K., & Aono, M. (2013). Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch. In Materials Research Society Symposium Proceedings (Vol. 1562). Materials Research Society. https://doi.org/10.1557/opl.2013.725

Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch. / Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Terabe, Kazuya; Aono, Masakazu.

Materials Research Society Symposium Proceedings. Vol. 1562 Materials Research Society, 2013.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsuruoka, T, Hasegawa, T, Terabe, K & Aono, M 2013, Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch. in Materials Research Society Symposium Proceedings. vol. 1562, Materials Research Society, 2013 MRS Spring Meeting, San Francisco, CA, United States, 13/4/1. https://doi.org/10.1557/opl.2013.725
Tsuruoka T, Hasegawa T, Terabe K, Aono M. Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch. In Materials Research Society Symposium Proceedings. Vol. 1562. Materials Research Society. 2013 https://doi.org/10.1557/opl.2013.725
Tsuruoka, Tohru ; Hasegawa, Tsuyoshi ; Terabe, Kazuya ; Aono, Masakazu. / Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta<inf>2</inf>O<inf>5</inf> atomic switch. Materials Research Society Symposium Proceedings. Vol. 1562 Materials Research Society, 2013.
@inproceedings{f93db5d94c8a4aadad7c8d07ed67b189,
title = "Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch",
abstract = "We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.",
keywords = "Memory, Nanoscale, Oxide",
author = "Tohru Tsuruoka and Tsuyoshi Hasegawa and Kazuya Terabe and Masakazu Aono",
year = "2013",
doi = "10.1557/opl.2013.725",
language = "English",
volume = "1562",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch

AU - Tsuruoka, Tohru

AU - Hasegawa, Tsuyoshi

AU - Terabe, Kazuya

AU - Aono, Masakazu

PY - 2013

Y1 - 2013

N2 - We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

AB - We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

KW - Memory

KW - Nanoscale

KW - Oxide

UR - http://www.scopus.com/inward/record.url?scp=84940241620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940241620&partnerID=8YFLogxK

U2 - 10.1557/opl.2013.725

DO - 10.1557/opl.2013.725

M3 - Conference contribution

VL - 1562

BT - Materials Research Society Symposium Proceedings

PB - Materials Research Society

ER -