Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

Original languageEnglish
JournalJournal of Mechanics
Volume1562
Issue number3
DOIs
Publication statusPublished - 2013 Apr 22
Externally publishedYes

Fingerprint

Conductance
Switch
switches
Switches
Point contacts
Bias voltage
Voltage
synapses
Electrodes
Oxides
Synapse
Electric potential
electric potential
pulses
Building Blocks
Electrode
Consecutive
Quantization
Contact
intervals

Keywords

  • memory
  • nanoscale
  • oxide

ASJC Scopus subject areas

  • Mechanical Engineering
  • Condensed Matter Physics
  • Applied Mathematics

Cite this

Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch. / Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Terabe, Kazuya; Aono, Masakazu.

In: Journal of Mechanics, Vol. 1562, No. 3, 22.04.2013.

Research output: Contribution to journalArticle

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