Quantum beats of homogeneously broadened excitons in GaN

Takao Aoki, G. Mohs, T. Ogasawara, R. Shimano, M. Kuwata-Gonokami, A. A. Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The polarization dependence of quantum beats from homogeneously broadened excitons in a high quality GaN epitaxial layer is studied. The wurtzite GaN epitaxial layers are grown to a thickness of 100 μm by vapor phase epitaxy into a sapphire substrate. The second harmonic of a Kerr lens mode-locked Ti-sapphire laser is used. In the collinear polarization configuration, the beats start with a maximum at τ = 0. In the crossed linear polarization, the beats start with a minimum and exhibit a π-phase shift compared to the collinear case. The decay time is 0.67 ps in the collinear polarization configuration and 0.60 ps in the crossed linear polarization configuration.

Original languageEnglish
Title of host publicationTechnical Digest - European Quantum Electronics Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages60-61
Number of pages2
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA
Duration: 1998 May 31998 May 8

Other

OtherProceedings of the 1998 International Quantum Electronics Conference
CitySan Francisco, CA, USA
Period98/5/398/5/8

Fingerprint

synchronism
excitons
linear polarization
sapphire
polarization
configurations
vapor phase epitaxy
wurtzite
phase shift
lenses
harmonics
decay
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Aoki, T., Mohs, G., Ogasawara, T., Shimano, R., Kuwata-Gonokami, M., & Yamaguchi, A. A. (1998). Quantum beats of homogeneously broadened excitons in GaN. In Anon (Ed.), Technical Digest - European Quantum Electronics Conference (pp. 60-61). Piscataway, NJ, United States: IEEE.

Quantum beats of homogeneously broadened excitons in GaN. / Aoki, Takao; Mohs, G.; Ogasawara, T.; Shimano, R.; Kuwata-Gonokami, M.; Yamaguchi, A. A.

Technical Digest - European Quantum Electronics Conference. ed. / Anon. Piscataway, NJ, United States : IEEE, 1998. p. 60-61.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aoki, T, Mohs, G, Ogasawara, T, Shimano, R, Kuwata-Gonokami, M & Yamaguchi, AA 1998, Quantum beats of homogeneously broadened excitons in GaN. in Anon (ed.), Technical Digest - European Quantum Electronics Conference. IEEE, Piscataway, NJ, United States, pp. 60-61, Proceedings of the 1998 International Quantum Electronics Conference, San Francisco, CA, USA, 98/5/3.
Aoki T, Mohs G, Ogasawara T, Shimano R, Kuwata-Gonokami M, Yamaguchi AA. Quantum beats of homogeneously broadened excitons in GaN. In Anon, editor, Technical Digest - European Quantum Electronics Conference. Piscataway, NJ, United States: IEEE. 1998. p. 60-61
Aoki, Takao ; Mohs, G. ; Ogasawara, T. ; Shimano, R. ; Kuwata-Gonokami, M. ; Yamaguchi, A. A. / Quantum beats of homogeneously broadened excitons in GaN. Technical Digest - European Quantum Electronics Conference. editor / Anon. Piscataway, NJ, United States : IEEE, 1998. pp. 60-61
@inproceedings{2181f71ddbc747e6aeaef6834136d916,
title = "Quantum beats of homogeneously broadened excitons in GaN",
abstract = "The polarization dependence of quantum beats from homogeneously broadened excitons in a high quality GaN epitaxial layer is studied. The wurtzite GaN epitaxial layers are grown to a thickness of 100 μm by vapor phase epitaxy into a sapphire substrate. The second harmonic of a Kerr lens mode-locked Ti-sapphire laser is used. In the collinear polarization configuration, the beats start with a maximum at τ = 0. In the crossed linear polarization, the beats start with a minimum and exhibit a π-phase shift compared to the collinear case. The decay time is 0.67 ps in the collinear polarization configuration and 0.60 ps in the crossed linear polarization configuration.",
author = "Takao Aoki and G. Mohs and T. Ogasawara and R. Shimano and M. Kuwata-Gonokami and Yamaguchi, {A. A.}",
year = "1998",
language = "English",
pages = "60--61",
editor = "Anon",
booktitle = "Technical Digest - European Quantum Electronics Conference",
publisher = "IEEE",

}

TY - GEN

T1 - Quantum beats of homogeneously broadened excitons in GaN

AU - Aoki, Takao

AU - Mohs, G.

AU - Ogasawara, T.

AU - Shimano, R.

AU - Kuwata-Gonokami, M.

AU - Yamaguchi, A. A.

PY - 1998

Y1 - 1998

N2 - The polarization dependence of quantum beats from homogeneously broadened excitons in a high quality GaN epitaxial layer is studied. The wurtzite GaN epitaxial layers are grown to a thickness of 100 μm by vapor phase epitaxy into a sapphire substrate. The second harmonic of a Kerr lens mode-locked Ti-sapphire laser is used. In the collinear polarization configuration, the beats start with a maximum at τ = 0. In the crossed linear polarization, the beats start with a minimum and exhibit a π-phase shift compared to the collinear case. The decay time is 0.67 ps in the collinear polarization configuration and 0.60 ps in the crossed linear polarization configuration.

AB - The polarization dependence of quantum beats from homogeneously broadened excitons in a high quality GaN epitaxial layer is studied. The wurtzite GaN epitaxial layers are grown to a thickness of 100 μm by vapor phase epitaxy into a sapphire substrate. The second harmonic of a Kerr lens mode-locked Ti-sapphire laser is used. In the collinear polarization configuration, the beats start with a maximum at τ = 0. In the crossed linear polarization, the beats start with a minimum and exhibit a π-phase shift compared to the collinear case. The decay time is 0.67 ps in the collinear polarization configuration and 0.60 ps in the crossed linear polarization configuration.

UR - http://www.scopus.com/inward/record.url?scp=0031698617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031698617&partnerID=8YFLogxK

M3 - Conference contribution

SP - 60

EP - 61

BT - Technical Digest - European Quantum Electronics Conference

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

ER -