Quantum beats of homogeneously broadened excitons in GaN

T. Aoki, G. Mohs, T. Ogasawara, R. Shimano, M. Kuwata-Gonokami, A. A. Yamaguchi

Research output: Contribution to conferencePaper

Abstract

The polarization dependence of quantum beats from homogeneously broadened excitons in a high quality GaN epitaxial layer is studied. The wurtzite GaN epitaxial layers are grown to a thickness of 100 μm by vapor phase epitaxy into a sapphire substrate. The second harmonic of a Kerr lens mode-locked Ti-sapphire laser is used. In the collinear polarization configuration, the beats start with a maximum at τ = 0. In the crossed linear polarization, the beats start with a minimum and exhibit a π-phase shift compared to the collinear case. The decay time is 0.67 ps in the collinear polarization configuration and 0.60 ps in the crossed linear polarization configuration.

Original languageEnglish
Pages60-61
Number of pages2
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA
Duration: 1998 May 31998 May 8

Other

OtherProceedings of the 1998 International Quantum Electronics Conference
CitySan Francisco, CA, USA
Period98/5/398/5/8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Aoki, T., Mohs, G., Ogasawara, T., Shimano, R., Kuwata-Gonokami, M., & Yamaguchi, A. A. (1998). Quantum beats of homogeneously broadened excitons in GaN. 60-61. Paper presented at Proceedings of the 1998 International Quantum Electronics Conference, San Francisco, CA, USA, .