Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure

Takahiro Deguchi, Kaoru Sekiguchi, Atsushi Nakamura, Takayuki Sota, Ryuji Matsuo, Shigefusa Chichibu, Shuji Nakamura

Research output: Contribution to journalArticle

148 Citations (Scopus)

Abstract

Excitonic absorption was observed in a transmittance spectrum of AlGaN/GaN/AlGaN single quantum well structure with a well width of 5 nm at room temperature. The total internal electric field strength in the well was about 0.73 MV/cm, which was estimated from the absorption peak position based on a simple calculation, neglecting excitons. The observation is clearly due to the quantum-confined Stark effect. While excitonic absorption was clearly observed even in such a high internal field, no light emission was detected under a He-Cd laser excitation at temperatures ranging from room temperature to T = 10 K. Light emission accompanied by a blue shift of the emission peak and an increase of emission intensity was observed under higher excitation power density. The obvious conclusion in the present case is that the presence of a high internal electric field in the well is a disadvantage for light emission.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number8 B
Publication statusPublished - 1999 Aug

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Stark effect
Light emission
Semiconductor quantum wells
light emission
quantum wells
Electric fields
Laser excitation
electric field strength
room temperature
blue shift
Excitons
Temperature
excitation
radiant flux density
field emission
transmittance
excitons
electric fields
lasers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure. / Deguchi, Takahiro; Sekiguchi, Kaoru; Nakamura, Atsushi; Sota, Takayuki; Matsuo, Ryuji; Chichibu, Shigefusa; Nakamura, Shuji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 8 B, 08.1999.

Research output: Contribution to journalArticle

Deguchi, Takahiro ; Sekiguchi, Kaoru ; Nakamura, Atsushi ; Sota, Takayuki ; Matsuo, Ryuji ; Chichibu, Shigefusa ; Nakamura, Shuji. / Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure. In: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; Vol. 38, No. 8 B.
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AU - Deguchi, Takahiro

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AU - Sota, Takayuki

AU - Matsuo, Ryuji

AU - Chichibu, Shigefusa

AU - Nakamura, Shuji

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