Quantum energy control of multiple‐quantum‐well structures by selective area mocvd and its application to photonic integrated devices

Masahiro Aoki, Makoto Suzuki, Hirohisa Sano, Tsuyoshi Taniwatari, Takayuki Tsutsui, Toshihiro Kawano

Research output: Contribution to journalArticle

Abstract

Quantum energy control is proposed in the form of a multiple‐quantum‐well (MQW) structure fabricated by selective metal organic chemical vapor deposition (MOCVD) growth to obtain high‐performance multiple‐function semiconductor photonic integrated devices. Its fundamental principle and the applied photonic integrated device are discussed. In general, semiconductor photonic integrated devices require semiconductor layers with different bandgap‐energy states for each structural device having a different function formed on the same semiconductor substrate. In this paper, the position‐dependent growth speed and the growth‐layer compositions on the substrate are controlled by selective MOCVD growth so that the quantum energy levels of the InGaAs/InP MQW structures grown simultaneously are varied over the substrate surface. As a result, a controllable range of the quantum energy level spanning over 200 meV and a high‐quality crystal configuration of selectively grown layers comparable to that formed by conventional growth processes have been confirmed. Application of this new integration method required that we design a monolithic integrated device of a distributed feedback laser diode and an electric field absorption‐type modulator, as well as a multiple‐wavelength distributed feedback laser array. Despite the simple design method, good crystal quality of the selectively grown layers, good optical coupling between the devices, and good device performance were observed.

Original languageEnglish
Pages (from-to)33-44
Number of pages12
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume77
Issue number10
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Power control
Photonics
photonics
Distributed feedback lasers
Organic chemicals
Semiconductor materials
Electron energy levels
Chemical vapor deposition
Substrates
distributed feedback lasers
Crystals
metalorganic chemical vapor deposition
energy
Semiconductor devices
Metals
energy levels
Modulators
Semiconductor lasers
optical coupling
laser arrays

Keywords

  • MQW structures
  • photonic integrated devices
  • quantum‐level control
  • Selective metal organic chemical vapor deposition (MOCVD) growth

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

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title = "Quantum energy control of multiple‐quantum‐well structures by selective area mocvd and its application to photonic integrated devices",
abstract = "Quantum energy control is proposed in the form of a multiple‐quantum‐well (MQW) structure fabricated by selective metal organic chemical vapor deposition (MOCVD) growth to obtain high‐performance multiple‐function semiconductor photonic integrated devices. Its fundamental principle and the applied photonic integrated device are discussed. In general, semiconductor photonic integrated devices require semiconductor layers with different bandgap‐energy states for each structural device having a different function formed on the same semiconductor substrate. In this paper, the position‐dependent growth speed and the growth‐layer compositions on the substrate are controlled by selective MOCVD growth so that the quantum energy levels of the InGaAs/InP MQW structures grown simultaneously are varied over the substrate surface. As a result, a controllable range of the quantum energy level spanning over 200 meV and a high‐quality crystal configuration of selectively grown layers comparable to that formed by conventional growth processes have been confirmed. Application of this new integration method required that we design a monolithic integrated device of a distributed feedback laser diode and an electric field absorption‐type modulator, as well as a multiple‐wavelength distributed feedback laser array. Despite the simple design method, good crystal quality of the selectively grown layers, good optical coupling between the devices, and good device performance were observed.",
keywords = "MQW structures, photonic integrated devices, quantum‐level control, Selective metal organic chemical vapor deposition (MOCVD) growth",
author = "Masahiro Aoki and Makoto Suzuki and Hirohisa Sano and Tsuyoshi Taniwatari and Takayuki Tsutsui and Toshihiro Kawano",
year = "1994",
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AU - Aoki, Masahiro

AU - Suzuki, Makoto

AU - Sano, Hirohisa

AU - Taniwatari, Tsuyoshi

AU - Tsutsui, Takayuki

AU - Kawano, Toshihiro

PY - 1994

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N2 - Quantum energy control is proposed in the form of a multiple‐quantum‐well (MQW) structure fabricated by selective metal organic chemical vapor deposition (MOCVD) growth to obtain high‐performance multiple‐function semiconductor photonic integrated devices. Its fundamental principle and the applied photonic integrated device are discussed. In general, semiconductor photonic integrated devices require semiconductor layers with different bandgap‐energy states for each structural device having a different function formed on the same semiconductor substrate. In this paper, the position‐dependent growth speed and the growth‐layer compositions on the substrate are controlled by selective MOCVD growth so that the quantum energy levels of the InGaAs/InP MQW structures grown simultaneously are varied over the substrate surface. As a result, a controllable range of the quantum energy level spanning over 200 meV and a high‐quality crystal configuration of selectively grown layers comparable to that formed by conventional growth processes have been confirmed. Application of this new integration method required that we design a monolithic integrated device of a distributed feedback laser diode and an electric field absorption‐type modulator, as well as a multiple‐wavelength distributed feedback laser array. Despite the simple design method, good crystal quality of the selectively grown layers, good optical coupling between the devices, and good device performance were observed.

AB - Quantum energy control is proposed in the form of a multiple‐quantum‐well (MQW) structure fabricated by selective metal organic chemical vapor deposition (MOCVD) growth to obtain high‐performance multiple‐function semiconductor photonic integrated devices. Its fundamental principle and the applied photonic integrated device are discussed. In general, semiconductor photonic integrated devices require semiconductor layers with different bandgap‐energy states for each structural device having a different function formed on the same semiconductor substrate. In this paper, the position‐dependent growth speed and the growth‐layer compositions on the substrate are controlled by selective MOCVD growth so that the quantum energy levels of the InGaAs/InP MQW structures grown simultaneously are varied over the substrate surface. As a result, a controllable range of the quantum energy level spanning over 200 meV and a high‐quality crystal configuration of selectively grown layers comparable to that formed by conventional growth processes have been confirmed. Application of this new integration method required that we design a monolithic integrated device of a distributed feedback laser diode and an electric field absorption‐type modulator, as well as a multiple‐wavelength distributed feedback laser array. Despite the simple design method, good crystal quality of the selectively grown layers, good optical coupling between the devices, and good device performance were observed.

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