Quantum hall effect in polar oxide heterostructures

A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, M. Kawasaki

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Abstract

We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn 1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 × 1012 to 3.7 × 1012 per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 ± 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

Original languageEnglish
Pages (from-to)1388-1391
Number of pages4
JournalScience
Volume315
Issue number5817
DOIs
Publication statusPublished - 2007 Mar 9

ASJC Scopus subject areas

  • General

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    Tsukazaki, A., Ohtomo, A., Kita, T., Ohno, Y., Ohno, H., & Kawasaki, M. (2007). Quantum hall effect in polar oxide heterostructures. Science, 315(5817), 1388-1391. https://doi.org/10.1126/science.1137430