Quantum transport in deterministically implanted single-donors in Si FETs

T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, Takashi Tanii, T. Endo, Y. Ono, E. Prati

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)

    Abstract

    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2011
    Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
    Duration: 2011 Dec 52011 Dec 7

    Other

    Other2011 IEEE International Electron Devices Meeting, IEDM 2011
    CountryUnited States
    CityWashington, DC
    Period11/12/511/12/7

    Fingerprint

    Electron tunneling
    Field effect transistors
    electron tunneling
    Ion implantation
    ion implantation
    Transistors
    transistors
    field effect transistors

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Shinada, T., Hori, M., Guagliardo, F., Ferrari, G., Komatubara, A., Kumagai, K., ... Prati, E. (2011). Quantum transport in deterministically implanted single-donors in Si FETs. In Technical Digest - International Electron Devices Meeting, IEDM [6131644] https://doi.org/10.1109/IEDM.2011.6131644

    Quantum transport in deterministically implanted single-donors in Si FETs. / Shinada, T.; Hori, M.; Guagliardo, F.; Ferrari, G.; Komatubara, A.; Kumagai, K.; Tanii, Takashi; Endo, T.; Ono, Y.; Prati, E.

    Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131644.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Shinada, T, Hori, M, Guagliardo, F, Ferrari, G, Komatubara, A, Kumagai, K, Tanii, T, Endo, T, Ono, Y & Prati, E 2011, Quantum transport in deterministically implanted single-donors in Si FETs. in Technical Digest - International Electron Devices Meeting, IEDM., 6131644, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131644
    Shinada T, Hori M, Guagliardo F, Ferrari G, Komatubara A, Kumagai K et al. Quantum transport in deterministically implanted single-donors in Si FETs. In Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131644 https://doi.org/10.1109/IEDM.2011.6131644
    Shinada, T. ; Hori, M. ; Guagliardo, F. ; Ferrari, G. ; Komatubara, A. ; Kumagai, K. ; Tanii, Takashi ; Endo, T. ; Ono, Y. ; Prati, E. / Quantum transport in deterministically implanted single-donors in Si FETs. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
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    AU - Guagliardo, F.

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    AU - Komatubara, A.

    AU - Kumagai, K.

    AU - Tanii, Takashi

    AU - Endo, T.

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