Quantum transport in deterministically implanted single-donors in Si FETs

T. Shinada; M. Hori; F. Guagliardo; G. Ferrari; A. Komatubara; K. Kumagai; T. Tanii; T. Endo; Y. Ono; E. Prati

doi:10.1109/IEDM.2011.6131644

Quantum transport in deterministically implanted single-donors in Si FETs

T. Shinada^*, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Citations (Scopus)

Abstract

Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D ⁰ and D ^- states; Hubbard band formation due to the inter-donor coupling.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	30.4.1-30.4.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131644
Publication status	Published - 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 2011 Dec 5 → 2011 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2011.6131644

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Shinada, T., Hori, M., Guagliardo, F., Ferrari, G., Komatubara, A., Kumagai, K., Tanii, T., Endo, T., Ono, Y., & Prati, E. (2011). Quantum transport in deterministically implanted single-donors in Si FETs. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 30.4.1-30.4.4). [6131644] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131644

Shinada, T, Hori, M, Guagliardo, F, Ferrari, G, Komatubara, A, Kumagai, K, Tanii, T, Endo, T, Ono, Y & Prati, E 2011, Quantum transport in deterministically implanted single-donors in Si FETs. in 2011 International Electron Devices Meeting, IEDM 2011., 6131644, Technical Digest - International Electron Devices Meeting, IEDM, pp. 30.4.1-30.4.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131644

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abstract = "Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.",

author = "T. Shinada and M. Hori and F. Guagliardo and G. Ferrari and A. Komatubara and K. Kumagai and T. Tanii and T. Endo and Y. Ono and E. Prati",

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doi = "10.1109/IEDM.2011.6131644",

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AU - Shinada, T.

AU - Hori, M.

AU - Guagliardo, F.

AU - Ferrari, G.

AU - Komatubara, A.

AU - Kumagai, K.

AU - Tanii, T.

AU - Endo, T.

AU - Ono, Y.

AU - Prati, E.

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AB - Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

Quantum transport in deterministically implanted single-donors in Si FETs

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