Quantum transport in deterministically implanted single-donors in Si FETs

T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages30.4.1-30.4.4
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Shinada, T., Hori, M., Guagliardo, F., Ferrari, G., Komatubara, A., Kumagai, K., Tanii, T., Endo, T., Ono, Y., & Prati, E. (2011). Quantum transport in deterministically implanted single-donors in Si FETs. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 30.4.1-30.4.4). [6131644] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131644