Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies

Simona Achilli*, Nguyen H. Le, Guido Fratesi, Nicola Manini, Giovanni Onida, Marco Turchetti, Giorgio Ferrari, Takahiro Shinada, Takashi Tanii, Enrico Prati

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.

Original languageEnglish
Title of host publication2021 Silicon Nanoelectronics Workshop, SNW 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487819
DOIs
Publication statusPublished - 2021
Event26th Silicon Nanoelectronics Workshop, SNW 2021 - Virtual, Online, Japan
Duration: 2021 Jun 13 → …

Publication series

Name2021 Silicon Nanoelectronics Workshop, SNW 2021

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2021
Country/TerritoryJapan
CityVirtual, Online
Period21/6/13 → …

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture

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