TY - JOUR
T1 - Quantum wells with zincblende MnTe barriers
AU - Han, J.
AU - Durbin, S. M.
AU - Gunshor, R. L.
AU - Kobayashi, M.
AU - Menke, D. R.
AU - Pelekanos, N.
AU - Hagerott, M.
AU - Nurmikko, A. V.
AU - Nakamura, Y.
AU - Otsuka, N.
N1 - Funding Information:
The authors gratefully acknowledge numerous insightful discussions with LA. Kolodziejski, and the assistance of D.L. Mathine, Y.R. Lee, A.K. Ramdas, and D.A. Lubeiski. Research support was provided by National Science Foundation grants MRG-8913706 (Purdue) and ECS-8916026 (Brown), Defense Advanced Research Projects Agency/ Office of Naval Research University Research Initiative Program 218-25015, and Office of Naval Research (ONR) grants N00014-89-J1604 (Purdue), and N00014-90-J1168 (Brown).
PY - 1991/5/2
Y1 - 1991/5/2
N2 - In this paper we describe a series of MnTe/CdTe/MnTe and MnTe/InSb/MnTe single quantum well structures. For the CdTe quantum wells we report the observation of luminescence covering the entire visible range from red to blue; a quantized state in the InSb well is used to implement resonant tunneling. X-ray diffraction and transmission electron microscopy (TEM) were used to evaluate the microstructural quality of the structures. Dark-field TEM showed that, in spite of the 2.3% lattice mismatch, the MnTe layers remained pseudomorphic and dislocation-free. High resolution images (also used to determine dimensional details) indicated that the interfaces were atomically abrupt, and that the CdTe and InSb wells were essentially unstrained in each of the structures; most of the strain was contained in the MnTe barrier layers. Optical properties of the single quantum well structures have been studied using photoluminescence and photoluminescence excitation spectroscopy. Blue luminescence at 2.59 eV (n = 1 transition) has been observed from a structure with a 10 Å CdTe well. The negative differential resistance observed from MnTe/InSb resonant tunneling structures represents, to our knowledge, the first report of a dimensionally quantized state in InSb.
AB - In this paper we describe a series of MnTe/CdTe/MnTe and MnTe/InSb/MnTe single quantum well structures. For the CdTe quantum wells we report the observation of luminescence covering the entire visible range from red to blue; a quantized state in the InSb well is used to implement resonant tunneling. X-ray diffraction and transmission electron microscopy (TEM) were used to evaluate the microstructural quality of the structures. Dark-field TEM showed that, in spite of the 2.3% lattice mismatch, the MnTe layers remained pseudomorphic and dislocation-free. High resolution images (also used to determine dimensional details) indicated that the interfaces were atomically abrupt, and that the CdTe and InSb wells were essentially unstrained in each of the structures; most of the strain was contained in the MnTe barrier layers. Optical properties of the single quantum well structures have been studied using photoluminescence and photoluminescence excitation spectroscopy. Blue luminescence at 2.59 eV (n = 1 transition) has been observed from a structure with a 10 Å CdTe well. The negative differential resistance observed from MnTe/InSb resonant tunneling structures represents, to our knowledge, the first report of a dimensionally quantized state in InSb.
UR - http://www.scopus.com/inward/record.url?scp=0026413172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026413172&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(91)91078-O
DO - 10.1016/0022-0248(91)91078-O
M3 - Article
AN - SCOPUS:0026413172
SN - 0022-0248
VL - 111
SP - 767
EP - 771
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -