We have observed lasing in a complicated eigenmode of a quasi-stadium laser diode with an unstable resonator consisting of two curved end mirrors obeying an unstable resonator condition and two straight side-wall mirrors. The laser was fabricated by application of a reactive-ion-etching technique to a molecular beam epitaxy - grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The far-field pattern shows that the lasing mode corresponds to the complicated lowest-loss mode obtained numerically by an extended Fox - Li method.
|Number of pages||3|
|Publication status||Published - 2003 Mar 15|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics