Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe

M. Koh, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, Takashi Tanii, S. Mori, I. Ohdomari

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    Abstract

    Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.

    Original languageEnglish
    Pages (from-to)364-368
    Number of pages5
    JournalApplied Surface Science
    Volume104-105
    DOIs
    Publication statusPublished - 1996 Sep

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    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics

    Cite this

    Koh, M., Horita, K., Shigeta, B., Matsukawa, T., Kishida, A., Tanii, T., Mori, S., & Ohdomari, I. (1996). Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe. Applied Surface Science, 104-105, 364-368. https://doi.org/10.1016/S0169-4332(96)00172-9