Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe

M. Koh, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, S. Mori, I. Ohdomari

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.

Original languageEnglish
Pages (from-to)364-368
Number of pages5
JournalApplied Surface Science
Volume104-105
DOIs
Publication statusPublished - 1996 Sep

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Koh, M., Horita, K., Shigeta, B., Matsukawa, T., Kishida, A., Tanii, T., Mori, S., & Ohdomari, I. (1996). Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe. Applied Surface Science, 104-105, 364-368. https://doi.org/10.1016/S0169-4332(96)00172-9